I’m unsure if I interpreted your message correctly, but it appears that you want to shift the gate charge region [2,3] to the left. In a reverse engineering analysis, the gate charge section in the model generator is responsible for computing MOSFET model parameters such as Cgs, Cgdmin, Cgsmax, and Cjo. The model parameter associated with the region [2,3] is Cgdmin and Cgdmax. Therefore, if specific details of your results are crucial, you may consider fine-tuning the model parameters. Here is an example of adjusting Cgdmin by -50%.
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