LTspice and Qspice yield the same result for this simulation setup. I expect that your question is not different in the simulator. There is a parasitic capacitance between the drain and source, and when the FET is OFF, the discharge path is through R1. That’s why with 1000 ohms, the discharge is much slower than with 10 ohms. If you delete CJO from the bode diode model in DDS1 and DGD1, you will speed up the turn-off speed, but that is not realistic.