I understand that Qorvo SiC FETs have lower body diode voltage drop. How do Qorvo SiC FETs realize a much lower body diode forward voltage (VF) than other type of SiC FETs?
When Qorvo’s SiC FET conducts current in 3rd quadrant (from source to drain) direction, the Cascode structure enables SiC JFET channel to be turned on automatically. This is because in Cascode structure when Si MOSFET conducts in 3rd quadrant, the 0.7V body diode forward voltage will turn on the normally-on SiC JFET. Therefore, the equivalent body diode model of a Qorvo’s SiC FET is the body diode of Si MOSFET in series with the on-resistance of SiC JFET, voltage drop always lower than other type of SiC FET.
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