came from LTSPICE to QSPICE because I’ve seen this : "[quote=“Engelhardt, post:5, topic:15038”]
QSPICE introduces new aspects to the FET device equations: Subthreshold conduction and the ability to match both the saturation and linear regions..
[/quote]
Now I made my 1st QSPICE schematic : 2N7002, source: GND, drain: +5V ,gate : 0..2V ramp.
I expected to see the exponential current rise of I(drain) below VTO, but there is none !?
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The default NMOS shows square behavior.. So also not the expected exponential dependence.
However, the integrated 2N7002 model clearly shows subthreshold region in my sim:
thanks a lot, tobalt. Meanwhile I have installed an up to date version of QSPICE and I can confirm your results. I’m impressed, in QSPICE power MOSFET models are much more detailed than in LTSPICE. Will go the hard way from LTSPICE to QSPICE - sigh, there is no single click .asc to .qsc converter…