Sorry if this has been covered before. Trying to model a Vishay Schottky diode (15 Amps/200 Volts) and I can’t find the recovery time parameters for the model generator. I have searched other similar diodes and only a very few FETs list these parameters in their datasheets. I am stumped on how to proceed. TIA.
Set 0 in reverse recovery charge for Schottky in the model generator; it will remove tt in its diode model generation. Schottky is expected to have ignorable reverse recovery. That why their model only with junction capacitor Cjo but not tt. Any transient reverse kind of thing is contributed by junction capacitor in Schottky model.
In real Schottky diodes, guard rings from the P-N junction can be used to reduce leakage. Therefore, the model may have a non-zero TT value. When I was designing TTL Schottky chips, I used such Schottky chips on the output transistors of the chips and Schottky protective diodes on the inputs of the chips. Leaks are important in these places. No security rings were used inside the microcircuit. There are other ways to reduce Schottky diode leaks.
Much thanks that helps greatly!