Hello.
I hope this message finds you well. I want to use this ( UF3N170400B7S ) high voltage SiC Jfet in my project.
Based on the datasheet of this Jfet the pulsed current of this switch is 16A ( I am not sure if it is for 200ns or not because there is a 200ns pulse time for Vgs.)
By the way, Is it possible for me to pass around 70A from this device for less than 20ns? Is there any calculation or formula for this SiC jfet regarding the highest peak current in a very short time?
Best regards
The Idm rating is a kind of dividing line between ohmic and saturation operation. If you apply a current pulse equal to Idm for longer than about 10 microseconds, then the JFET goes into thermal runaway. Even though this part is not short-circuit rated, 20ns is such a short duration that you can short circuit it for that long, or for at least a few hundred nanoseconds. Vds across the part will likely prevent the current from reaching 70A.
I’d check the datasheet for any info on peak current for really short times, but it’s likely that 70A could be pushing the device’s limits