.subckt VOM1271 A K P N
D1 A K CAP
D2 A 1 LED
R1 A 1 2.4e6
R2 1 K 10m tc=-3m5, -18u
C1 V A 0p1
C2 N K 2pa
G1 N V 1 K 155m
D3 V N PV n=11
I1 V N TBL(0 0 0.3 80n 0.6 0u8 18 3u)
D4 V P Do
Q1 N V P Qo
.model CAP d Rs=1 Cjo=100p M=1.2 Vj=0.4
+ Is=1e-30 N=20 ; disable diode
.model LED d Is=0n6 Rs=30m N=3.17 Xti=41 Eg=0.8
.model PV d Is=60p Rs=0.3 N=2.5 Cjo=20p Xti=45 Eg=0.5
.model Do d Is=5f Rs=8 N=1.7 Cjo=1p
.model Qo pnp Is=1f Bf=200 Xtb=1.5 Vaf=100 BVbe=6.2
+ Rb=200 Rc=10 Re=8 Cjc=0p5 Cje=1p
.ends VOM1271 


*********************************************************************
*  (C)  Copyright  TOSHIBA CORPORATION  2016
*  Date                 : 30/08/2016
*  File Name            : TK290P65Y.lib
*  Part Number          : TK290P65Y
*  Parameter Ver.       : Ver.1
*  Simulator            : PSpice
*  Model Call Name      : NMOS_TK290P65Y
*  TNOM                 : 25 degree
*  Pin Assign           : 1=Drain 2=Gate 3=Source
*
* Operation of this model has been verified only on the OrCAD.
*********************************************************************
.SUBCKT NMOS_TK290P65Y 1 2 3
M0 1 22 3 3 smsmosfet
+ L = 5e-06
+ W = 0.3
+ AD = 3e-07
+ AS = 3e-07
+ PD = 0.6
+ PS = 0.6
D0 3 1 DDS1
D1 3 1 DDS2
D2 2 10 DGS1
D3 3 10 DGS2
R2 10 2 1E+009
R3 10 3 1E+009
RG 2 22 32.0
.MODEL smsmosfet NMOS
+ LEVEL = 7
+ MOBMOD = 1
+ CAPMOD = 3
+ NOIMOD = 1
+ TOX = 1.5e-08
+ XJ = 1.5E-007
+ NCH = 1.7E+017
+ NGATE = 0
+ RSH = 0
+ TNOM = 25
+ VTH0 = 4.115
+ VOFF = -0.08
+ NFACTOR = 7
+ U0 = 3761
+ K1 = 0.5
+ K2 = 0
+ K3 = 80
+ K3B = 0
+ W0 = 2.5E-006
+ NLX = 1.74E-007
+ DVT0 = 2.2
+ DVT1 = 0.53
+ DVT2 = -0.032
+ DVT0W = 0
+ DVT1W = 5.3E+006
+ DVT2W = -0.032
+ DWG = 0
+ DWB = 0
+ UA = 7.3481e-10
+ UB = 5.87E-019
+ UC = -4.65E-011
+ VSAT = 10788
+ A0 = 0.182
+ AGS = 8.08
+ B0 = 0
+ B1 = 0
+ KETA = -0.047
+ A1 = 0
+ A2 = 1
+ DELTA = 0.14643
+ RDSW = 64500
+ PRWG = 0
+ PRWB = 0
+ WR = 1
+ CDSC = 2.4E-004
+ CDSCD = 0
+ CDSCB = 0
+ CIT = 0
+ ETA0 = 0.08
+ ETAB = -0.07
+ DSUB = 0.56
+ PCLM = 1.4547
+ PDIBLC1 = 0.39
+ PDIBLC2 = 0.010996
+ PDIBLCB = 0
+ DROUT = 0.56
+ PSCBE1 = 4.24E+008
+ PSCBE2 = 1E-009
+ PVAG = 0
+ ALPHA0 = 0
+ ALPHA1 = 0
+ BETA0 = 30
+ NJ = 1
+ JS = 0
+ XPART = 0
+ CGSO = 2.6363e-12
+ CGDO = 9.8506e-12
+ CGBO = 0
+ CGDL = 6.4251e-09
+ CGSL = 1.6856e-13
+ CKAPPA = 0.47
+ CF = 0
+ CLC = 1E-007
+ CLE = 0.6
+ VOFFCV = 0
+ NOFF = 1
+ DLC = 0
+ ACDE = 1
+ MOIN = 15
+ CJ = 0
+ CJSW = 1E-012
+ CJSWG = 1E-012
+ PB = 1
+ PBSW = 1
+ PBSWG = 1
+ MJ = 0.5
+ MJSW = 0.33
+ MJSWG = 0.33
+ AF = 1
+ EF = 1
+ KF = 0
+ UTE = -1.0
+ KT1 = -1.3
+ KT1L = 0
+ KT2 = 0.022
+ UA1 = 4.31E-009
+ UB1 = -7.61E-018
+ UC1 = -5.6E-011
+ AT = 10000
+ PRT = 150000
+ XTI = 3
+ TCJ = 0
+ TPB = 0
+ TCJSW = 0
+ TPBSW = 0
+ TCJSWG = 0
+ TPBSWG = 0
+ DWC = 0.094
.MODEL DDS1 D
+ TNOM = 25
+ IS = 1e-07
+ RS = 0.040449
+ N = 1.9507
+ CJO = 1.2e-08
+ VJ = 1.4
+ M = 0.9
+ XTI = -10
+ TT = 5.2e-07
+ BV = 650
+ IBV = 0.01
.MODEL DDS2 D
+ TNOM = 25
+ IS = 1e-07
+ RS = 0.040449
+ N = 1.9507
+ CJO = 1e-15
+ VJ = 0.7
+ M = 0.3
+ XTI = -10
+ TT = 5.2e-07
.MODEL DGS1 D
+ TNOM = 25
+ IS = 1E-015
.MODEL DGS2 D
+ TNOM = 25
+ IS = 1E-015
.ENDS



*******************************************************************
******STMicroelectronics MOSFET, IGBT and Bipolar Library *********
*******************************************************************
*											*
* Models provided by STMicroelectronics are not guaranteed to	*
* fully represent all the specifications and operating		*
* characteristics of the product behavior that they reproduce.	*
* The model describes the characteristics of a typical device.	*
* In all cases, the current product data sheet contains all		*
* information to be used like final design guidelines and the	*
* only actual performance specification.					*
* Altough models can be a useful tool in evaluating device		*
* performance, they cannot model exact device performance under	*
* all conditions.									*
* STMicroelectronics therefore does not assume any			*
* responsibility arising from their use.					*
* STMicroelectronics reserves the right to change models		*
* without prior notice.								*
*											*
* Rev 3.1 - 04 NOV 2013								*
*******************************************************************

.SUBCKT STD18N55M5_V2 1 2 3
*******************************************************************
E1 Tj val_T VALUE={TEMP}
R1 val_T 0 1E-03
*******************************************************************
Rtk Tj 0 1E10
Rtk1 Tj 0 1E10
*******************************************************************
Ld 1 d1k 0.1E-09
RLd 1 d1k 10
Ls ss 3 0.1E-09
RLs ss 3 10
Lg 2 g2 0.1E-09
RLg 2 g2 10
Rg1 g2 g {rg}
*******************************************************************
.PARAM Area=1 BVDSS=1 Raval=0.25
*******************************************************************
.PARAM  Rg=1.7 Vth0=4.85
.PARAM  Lambda=0.009 
.PARAM  KpSat0=35 KpLin0=23 Drs=0.202
.PARAM  Rd=0.125
.PARAM  Rpa=0.025E-04
*******************************************************************
.PARAM  Unt=-1.8 Vthx=3.5E-03 Ksat=-1 Klin=-5
.PARAM  A=1 B=1 Rx=3.55

E_soglia soglia 0 value {vth1(V(TJ))}
R_soglia soglia 0 1
*******************************************************************
.FUNC r_s(T) {((T+273)/300)**(unt)/drs}
.FUNC vth1(x) {vth0-vthx*(x-27)}
.FUNC kpsat(x) {kpsat0*((x+273)/300)**(ksat)}
.FUNC kplin(x) {kplin0*((x+273)/300)**(klin)}
.FUNC un(T) {b*((T+273)/300)**(unt)}
*******************************************************************
Gmos d s value {Area*(IF(V(d,s)>0,(IF(v(g,s)<vth1(V(TJ)),0,
+(IF((V(d,s)<(v(g,s)-vth1(V(TJ)))*kpsat(v(TJ))/kplin(v(TJ))),(1+LAMBDA*v(d,s))*kplin(v(TJ))/2*v(d,s)*
+(2*(v(g,s)-vth1(V(TJ)))-kplin(v(TJ))/kpsat(v(TJ))*v(d,s)),
+(1+LAMBDA*v(d,s))*kpsat(v(TJ))/2*(v(g,s)-vth1(V(TJ)))**2)))),-(IF(v(g,s)<vth1(V(TJ)),0,
+(IF((V(s,d)<(v(g,s)-vth1(V(TJ)))*kpsat(v(TJ))/kplin(v(TJ))),(1+LAMBDA*v(s,d))*kplin(v(TJ))/2*v(s,d)*
+(2*(v(g,s)-vth1(V(TJ)))-kplin(v(TJ))/kpsat(v(TJ))*v(s,d)),
+(1+LAMBDA*v(s,d))*kpsat(v(TJ))/2*(v(g,s)-vth1(V(TJ)))**2))))))} 

G_RMos d1k dd VALUE={Area*((un(V(TJ))*(V(d1k,d)))/(rd+rpa*((I(V_sense)**a))**Rx))}
G_rs s ss VALUE={(Area*(r_s(V(TJ))*v(s,ss))/drs)}
R_Grs s ss 1E03
R_Rmos d1k dd 1E03

V_sense dd d 0
*******************************************************************
rdd dd 0 1E13
rdd1 d 0 1E13
rdd3 s 0 1E13
R_DS d s 1E13
*******************************************************************
CGS g 3  {1352E-12*Area}
R_CGS g 3 500E06
*******************************************************************
Edev dev1 0 value {v(d,g)}
c_dev1 dev1 dev2 1E-12
R_dev dev2 dev3 1E-06
V_miller dev3 0 0 
G_miller d g  value ={1*v(alfa)*i(V_miller)*1E12}
*******************************************************************
Rcap alfa 0 1E03
Ecap alfa 0 TABLE ={V(d,s)}
+(0.1,1274.3p) 
+(0.2,983.1p) 
+(0.5,891.3p) 
+(1,771.6p) 
+(2,652.5p) 
+(3,608.6p) 
+(5,571.1p) 
+(7,542.5p) 
+(10,471.9p) 
+(15,412.2p) 
+(20,334.1p) 
+(25,88.5p) 
+(30,17.7p) 
+(40,5.9p) 
+(50,4.9p) 
+(100,3.4p) 
+(150,3.2p) 
+(200,3.1p) 
+(250,3.1p) 
+(300,3.1p) 
+(350,3.3p) 
+(400,3.6p) 
+(450,3.9p) 
+(500,4.5p) 
+(550,5.4p) 
+(600,7.3p) 
+(650,7.6p) 
*******************************************************************
Edevc dev1c 0 value {v(d,s)}
c_dev1c dev1c dev2c 1E-12
R_devc dev2c dev3c 1
V_millerc dev3c 0 0 
G_coss d s  value ={0.5*v(alfa2)*i(V_millerc)*1E12}
*******************************************************************
Rcap2 alfa2 0 1E03
Ecap2 alfa2 0 TABLE ={V(d,s)}
+(0.1,12475.8p) 
+(0.2,11839.9p) 
+(0.5,10237.6p) 
+(1,8721.4p) 
+(2,7180.6p) 
+(3,6296.1p) 
+(5,5312p) 
+(7,4708.9p) 
+(10,3553.8p) 
+(15,688.3p) 
+(20,221.5p) 
+(25,149.9p) 
+(30,114.3p) 
+(40,73.3p) 
+(50,55.4p) 
+(100,32.1p) 
+(150,29.8p) 
+(200,28.5p) 
+(250,27.5p) 
+(300,26.8p) 
+(350,26.3p) 
+(400,25.8p) 
+(450,25.2p) 
+(500,24.6p) 
+(550,24.2p) 
+(600,23.7p) 
+(650,23.6p) 
*******************************************************************
R_bvdss	d1k d1bvdss1 {raval}
V_bvdss	d1bvdss1 d1bvdss2 0
G_bvd	d1bvdss2 ss VALUE={I_BVDSS(V(d1bvdss2,ss),v(Tj))}
R_GBDSS	d1bvdss2 0 1E13
.FUNC I_BVDSS(z,k1) {(exp(min(-175+z/(bvd(k1)),7))-1E-12)}
*******************************************************************
.FUNC bvd(kk) {3.65*BVDSS+0.0018*kk}
*******************************************************************
.FUNC Rdiodo(rdid) {rdid0*((rdid+273)/300)**(rdid_temp)}
.PARAM rdid0={2/Area} rdid_temp=0.1

G_R_didd d1k d1z VALUE={200*(V(d1k,d1z)/Rdiodo(V(TJ)))}
R_G_R_didd d1k d1z {1/Area}

V_diodo d1zd d1z 0
G_diode 3 d1zd VALUE={I_diode(V(3,d1zd),v(Tj))}

R_x 3 d1zd 1E13

.FUNC I_diode(z3,k3) {(exp(min(-15+z3/(did(k3)),7))-10E-09)}
.FUNC did(k4) {0.05-70E-06*k4}
*******************************************************************
R_R003 aa 0 500E06
R_edep d1k d_dedep 100
E_Eds d_dedep edep VALUE {-V(aa,0)*25E3}
C_Cds edep ss {10E-12*Area}
E_E001 ba 0 VALUE {-I(V_diodo)*(0.0016*v(Tj)+1)}
G_R001 aa ba VALUE={1*V(aa,ba)/(500*(0.011*v(Tj)+1))}
R_R002 aa ba 10E3
C aa 0 15E-12
*******************************************************************
.ENDS STD18N55M5_V2
 
* END OF MODELLING


********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*10-Sep-2018
*ECN S18-0920, Rev. A
*File Name: SiHD240N60E_PS.txt and SiHD240N60E_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiHD240N60E D G S 
M1 3 GX S S NMOS W= 1390000u L= 2u 
M2 S GX S D PMOS W= 1390000u L= 0.25u 
M2B S GX S 3 PMOS2 W= 1390000u L= 0.20u 
R1 4 3 0.840e-01 TC=2.850e-02,-2.099e-08
J1 D S 4 JD 1390000u 
.MODEL JD NJF (VTO = -1.300e+01 BETA = 2.207e-01 LAMBDA = 1.000e-03 
+BETATCE = -1.227e-01 VTOTC = -0.03 IS = 1e-18 N = 10 )
CGS GX S 1.000e-13
CGD GX D 3.418e-12 
RG G GY 1.5 
RTCV 100 S 1e6 TC=5.123e-03,0
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 1390000u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8
+ RS = 0 KP = 1.629e-05 NSUB = 8.418e+16 
+ KAPPA = 1.700e-01 NFS = 1.002e+11
+ LD = 0 IS = 0 TPG = 1    )
***************************************************************
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 10e-8
+NSUB = 5.205e+15 IS = 0 TPG = -1    )
.MODEL PMOS2 PMOS ( LEVEL = 3 TOX = 10e-8
+NSUB = 3e11 IS = 0 TPG = -1    )
****************************************************************
.MODEL DBD D ( 
+FC = 0.1 TT = 4.70e-07 T_measured = 25 BV = 601
+RS = 8.804e-03 N = 1.457e+00 IS = 2.291e-09
+EG = 1.216e+00 XTI = 2.638e-01 TRS1 = 3.129e-03
+CJO = 8.706e-09 VJ = 1.013e+00 M = 1.000e+00 )
.ENDS


*****************************************************************
* INFINEON Power Transistors                                    *
* Level-0/1/3 PSPICE Library for CoolMOS Transistors C6 600V    *
* Version 280714                                                *
*                                                               *
*****************************************************************
*****************************************************************
*                                                               *
* Models provided by INFINEON are not warranted by INFINEON as  *
* fully representing all of the specifications and operating    *
* characteristics of the semiconductor product to which the     *
* model relates. The model describe the characteristics of a    *
* typical device.                                               *
* In all cases, the current data sheet information for a given  *
* device is the final design guideline and the only actual      *
* performance specification.                                    *
* Altough models can be a useful tool in evaluating device      *
* performance, they cannot model exact device performance under *
* all conditions, nor are they intended to replace bread-       *
* boarding for final verification. INFINEON therefore does not  *
* assume any liability arising from their use.                  *
* INFINEON reserves the right to change models without prior    *
* notice.                                                       *
*                                                               *
* This library contains models of the following INFINEON        *
* CoolMOS transistors:                                          *
*                                                               *
*   600 V C6                                                    *
*       IPA60R099C6        IPA60R125C6       IPA60R160C6        *
*       IPA60R190C6        IPA60R280C6       IPA60R380C6        *
*       IPA60R450C6        IPA60R520C6       IPA60R600C6        *
*       IPA60R750C6        IPA60R950C6       IPD60R380C6        *
*       IPD60R450C6        IPD60R520C6       IPD60R600C6        *
*       IPD60R750C6        IPD60R950C6       IPD60R1K4C6        *
*       IPD60R2K0C6        IPD60R3K3C6       IPP60R074C6        *
*       IPP60R099C6        IPP60R125C6       IPP60R160C6        *
*       IPP60R190C6        IPP60R280C6       IPP60R380C6        *
*       IPP60R450C6        IPP60R520C6       IPP60R600C6        *
*       IPP60R750C6        IPP60R950C6       IPP60R1K4C6        *
*       IPP60R2K0C6        IPP60R3K3C6       IPW60R041C6        *
*       IPW60R070C6        IPW60R099C6       IPW60R125C6        *
*       IPW60R160C6        IPW60R190C6       IPW60R280C6        *
*       IPL60R1K5C6S       IPL60R2K1C6S                         *
*                                                               *
*****************************************************************

.SUBCKT IPW60R041C6_L0  drain  gate  source

Lg     gate  g1    5n
Ld     drain d1    3n
Ls     source s1   5n
Rs      s1    s2   2m

Rg     g1    g2     0.7
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 74.617  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.029 TC=15m
.MODEL MVDR NMOS (KP=224.44 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 195.4p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=77.58n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=15p  N=1.08  RS=2u  EG=1.12  TT=400n)
Rdiode  d1  21    0.81m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   13.44n
.MODEL     DGD    D(M=0.88   CJO=13.44n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    6.51n

.ENDS  IPW60R041C6_L0

******

.SUBCKT IPW60R070C6_L0  drain  gate  source

Lg     gate  g1    5n
Ld     drain d1    3n
Ls     source s1   5n
Rs      s1    s2   2m

Rg     g1    g2     0.85
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 43.369  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.05 TC=15m
.MODEL MVDR NMOS (KP=130.45 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 113.6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=45.09n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=8.7p  N=1.08  RS=4u  EG=1.12  TT=400n)
Rdiode  d1  21    1.39m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   7.81n
.MODEL     DGD    D(M=0.88   CJO=7.81n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    3.79n

.ENDS  IPW60R070C6_L0

******

.SUBCKT IPP60R074C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     0.6
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 35.255  VTO=4.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.072 TC=10m
.MODEL MVDR NMOS (KP=106.04 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 92.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=650   M=0.9  CJO=36.65n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=3245680p  N=2  RS=5u  EG=1.12  TT=250n)
Rdiode  d1  21    4.25m TC=0

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   6.35n
.MODEL     DGD    D(M=0.88   CJO=6.35n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    4n

.ENDS  IPP60R074C6_L0

******

.SUBCKT IPW60R099C6_L0  drain  gate  source

Lg     gate  g1    5n
Ld     drain d1    3n
Ls     source s1   5n
Rs      s1    s2   2m

Rg     g1    g2     1.6
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 30.391  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.071 TC=15m
.MODEL MVDR NMOS (KP=91.41 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 79.6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=31.6n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=6.1p  N=1.08  RS=6u  EG=1.12  TT=400n)
Rdiode  d1  21    1.99m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   5.48n
.MODEL     DGD    D(M=0.88   CJO=5.48n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    2.65n

.ENDS  IPW60R099C6_L0

******

.SUBCKT IPP60R099C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     1.6
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 30.391  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.071 TC=15m
.MODEL MVDR NMOS (KP=91.41 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 79.6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=31.6n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=6.1p  N=1.08  RS=6u  EG=1.12  TT=400n)
Rdiode  d1  21    1.99m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   5.48n
.MODEL     DGD    D(M=0.88   CJO=5.48n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    2.65n

.ENDS  IPP60R099C6_L0

******

.SUBCKT IPA60R099C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     1.6
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 30.391  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.071 TC=15m
.MODEL MVDR NMOS (KP=91.41 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 79.6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=31.6n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=6.1p  N=1.08  RS=6u  EG=1.12  TT=400n)
Rdiode  d1  21    1.99m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   5.48n
.MODEL     DGD    D(M=0.88   CJO=5.48n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    2.65n

.ENDS  IPA60R099C6_L0

******

.SUBCKT IPW60R125C6_L0  drain  gate  source

Lg     gate  g1    5n
Ld     drain d1    3n
Ls     source s1   5n
Rs      s1    s2   2m

Rg     g1    g2     3.7
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 24.293  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.089 TC=15m
.MODEL MVDR NMOS (KP=73.07 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 63.6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=25.26n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=4.9p  N=1.08  RS=7u  EG=1.12  TT=400n)
Rdiode  d1  21    2.49m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   4.38n
.MODEL     DGD    D(M=0.88   CJO=4.38n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    2.12n

.ENDS  IPW60R125C6_L0

******

.SUBCKT IPP60R125C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     3.7
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 24.293  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.089 TC=15m
.MODEL MVDR NMOS (KP=73.07 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 63.6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=25.26n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=4.9p  N=1.08  RS=7u  EG=1.12  TT=400n)
Rdiode  d1  21    2.49m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   4.38n
.MODEL     DGD    D(M=0.88   CJO=4.38n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    2.12n

.ENDS  IPP60R125C6_L0

******

.SUBCKT IPA60R125C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     3.7
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 24.293  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.089 TC=15m
.MODEL MVDR NMOS (KP=73.07 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 63.6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=25.26n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=4.9p  N=1.08  RS=7u  EG=1.12  TT=400n)
Rdiode  d1  21    2.49m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   4.38n
.MODEL     DGD    D(M=0.88   CJO=4.38n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    2.12n

.ENDS  IPA60R125C6_L0

******

.SUBCKT IPW60R160C6_L0  drain  gate  source

Lg     gate  g1    5n
Ld     drain d1    3n
Ls     source s1   5n
Rs      s1    s2   2m

Rg     g1    g2     6.4
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 18.988  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.114 TC=15m
.MODEL MVDR NMOS (KP=57.12 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 49.7p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=19.74n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=3.8p  N=1.08  RS=9u  EG=1.12  TT=400n)
Rdiode  d1  21    3.19m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   3.42n
.MODEL     DGD    D(M=0.88   CJO=3.42n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    1.66n

.ENDS  IPW60R160C6_L0

******

.SUBCKT IPP60R160C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     6.4
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 18.988  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.114 TC=15m
.MODEL MVDR NMOS (KP=57.12 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 49.7p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=19.74n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=3.8p  N=1.08  RS=9u  EG=1.12  TT=400n)
Rdiode  d1  21    3.19m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   3.42n
.MODEL     DGD    D(M=0.88   CJO=3.42n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    1.66n

.ENDS  IPP60R160C6_L0

******

.SUBCKT IPA60R160C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     6.4
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 18.988  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.114 TC=15m
.MODEL MVDR NMOS (KP=57.12 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 49.7p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=19.74n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=3.8p  N=1.08  RS=9u  EG=1.12  TT=400n)
Rdiode  d1  21    3.19m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   3.42n
.MODEL     DGD    D(M=0.88   CJO=3.42n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    1.66n

.ENDS  IPA60R160C6_L0

******

.SUBCKT IPW60R190C6_L0  drain  gate  source

Lg     gate  g1    5n
Ld     drain d1    3n
Ls     source s1   5n
Rs      s1    s2   2m

Rg     g1    g2     8.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 15.989  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.135 TC=15m
.MODEL MVDR NMOS (KP=48.1 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 41.9p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=16.62n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=3.2p  N=1.08  RS=10u  EG=1.12  TT=400n)
Rdiode  d1  21    3.78m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   2.88n
.MODEL     DGD    D(M=0.88   CJO=2.88n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    1.4n

.ENDS  IPW60R190C6_L0

******

.SUBCKT IPP60R190C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     8.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 15.989  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.135 TC=15m
.MODEL MVDR NMOS (KP=48.1 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 41.9p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=16.62n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=3.2p  N=1.08  RS=10u  EG=1.12  TT=400n)
Rdiode  d1  21    3.78m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   2.88n
.MODEL     DGD    D(M=0.88   CJO=2.88n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    1.4n

.ENDS  IPP60R190C6_L0

******

.SUBCKT IPA60R190C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     8.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 15.989  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.135 TC=15m
.MODEL MVDR NMOS (KP=48.1 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 41.9p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=16.62n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=3.2p  N=1.08  RS=10u  EG=1.12  TT=400n)
Rdiode  d1  21    3.78m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   2.88n
.MODEL     DGD    D(M=0.88   CJO=2.88n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    1.4n

.ENDS  IPA60R190C6_L0

******

.SUBCKT IPW60R280C6_L0  drain  gate  source

Lg     gate  g1    5n
Ld     drain d1    3n
Ls     source s1   5n
Rs      s1    s2   2m

Rg     g1    g2     11.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 10.861  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.199 TC=15m
.MODEL MVDR NMOS (KP=32.67 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 28.4p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=11.29n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=2.2p  N=1.08  RS=15u  EG=1.12  TT=400n)
Rdiode  d1  21    5.57m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.96n
.MODEL     DGD    D(M=0.88   CJO=1.96n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.95n

.ENDS  IPW60R280C6_L0

******

.SUBCKT IPP60R280C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     11.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 10.861  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.199 TC=15m
.MODEL MVDR NMOS (KP=32.67 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 28.4p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=11.29n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=2.2p  N=1.08  RS=15u  EG=1.12  TT=400n)
Rdiode  d1  21    5.57m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.96n
.MODEL     DGD    D(M=0.88   CJO=1.96n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.95n

.ENDS  IPP60R280C6_L0

******

.SUBCKT IPA60R280C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     11.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 10.861  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.199 TC=15m
.MODEL MVDR NMOS (KP=32.67 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 28.4p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=11.29n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=2.2p  N=1.08  RS=15u  EG=1.12  TT=400n)
Rdiode  d1  21    5.57m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.96n
.MODEL     DGD    D(M=0.88   CJO=1.96n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.95n

.ENDS  IPA60R280C6_L0

******

.SUBCKT IPD60R380C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     17.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 7.988  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.27 TC=15m
.MODEL MVDR NMOS (KP=24.03 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 20.9p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=8.31n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.6p  N=1.08  RS=21u  EG=1.12  TT=400n)
Rdiode  d1  21    7.57m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.44n
.MODEL     DGD    D(M=0.88   CJO=1.44n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.7n

.ENDS  IPD60R380C6_L0

******

.SUBCKT IPP60R380C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     17.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 7.988  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.27 TC=15m
.MODEL MVDR NMOS (KP=24.03 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 20.9p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=8.31n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.6p  N=1.08  RS=21u  EG=1.12  TT=400n)
Rdiode  d1  21    7.57m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.44n
.MODEL     DGD    D(M=0.88   CJO=1.44n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.7n

.ENDS  IPP60R380C6_L0

******

.SUBCKT IPA60R380C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     17.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 7.988  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.27 TC=15m
.MODEL MVDR NMOS (KP=24.03 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 20.9p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=8.31n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.6p  N=1.08  RS=21u  EG=1.12  TT=400n)
Rdiode  d1  21    7.57m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.44n
.MODEL     DGD    D(M=0.88   CJO=1.44n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.7n

.ENDS  IPA60R380C6_L0

******

.SUBCKT IPD60R450C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 7.073  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.305 TC=15m
.MODEL MVDR NMOS (KP=21.28 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 18.5p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=7.35n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.4p  N=1.08  RS=24u  EG=1.12  TT=400n)
Rdiode  d1  21    8.55m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.27n
.MODEL     DGD    D(M=0.88   CJO=1.27n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.62n

.ENDS  IPD60R450C6_L0

******

.SUBCKT IPP60R450C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 7.073  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.305 TC=15m
.MODEL MVDR NMOS (KP=21.28 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 18.5p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=7.35n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.4p  N=1.08  RS=24u  EG=1.12  TT=400n)
Rdiode  d1  21    8.55m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.27n
.MODEL     DGD    D(M=0.88   CJO=1.27n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.62n

.ENDS  IPP60R450C6_L0

******

.SUBCKT IPA60R450C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 7.073  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.305 TC=15m
.MODEL MVDR NMOS (KP=21.28 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 18.5p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=7.35n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.4p  N=1.08  RS=24u  EG=1.12  TT=400n)
Rdiode  d1  21    8.55m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.27n
.MODEL     DGD    D(M=0.88   CJO=1.27n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.62n

.ENDS  IPA60R450C6_L0

******

.SUBCKT IPD60R520C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 5.846  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.369 TC=15m
.MODEL MVDR NMOS (KP=17.59 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 15.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=6.08n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.2p  N=1.08  RS=29u  EG=1.12  TT=400n)
Rdiode  d1  21    10.34m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.05n
.MODEL     DGD    D(M=0.88   CJO=1.05n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.51n

.ENDS  IPD60R520C6_L0

******

.SUBCKT IPP60R520C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 5.846  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.369 TC=15m
.MODEL MVDR NMOS (KP=17.59 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 15.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=6.08n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.2p  N=1.08  RS=29u  EG=1.12  TT=400n)
Rdiode  d1  21    10.34m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.05n
.MODEL     DGD    D(M=0.88   CJO=1.05n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.51n

.ENDS  IPP60R520C6_L0

******

.SUBCKT IPA60R520C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 5.846  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.369 TC=15m
.MODEL MVDR NMOS (KP=17.59 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 15.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=6.08n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1.2p  N=1.08  RS=29u  EG=1.12  TT=400n)
Rdiode  d1  21    10.34m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   1.05n
.MODEL     DGD    D(M=0.88   CJO=1.05n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.51n

.ENDS  IPA60R520C6_L0

******

.SUBCKT IPD60R600C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     17.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 5.065  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.425 TC=15m
.MODEL MVDR NMOS (KP=15.24 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=5.27n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1p  N=1.08  RS=33u  EG=1.12  TT=400n)
Rdiode  d1  21    11.94m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.91n
.MODEL     DGD    D(M=0.88   CJO=0.91n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.44n

.ENDS  IPD60R600C6_L0

******

.SUBCKT IPP60R600C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     17.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 5.065  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.426 TC=15m
.MODEL MVDR NMOS (KP=15.24 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=5.27n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1p  N=1.08  RS=33u  EG=1.12  TT=400n)
Rdiode  d1  21    11.94m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.91n
.MODEL     DGD    D(M=0.88   CJO=0.91n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.44n

.ENDS  IPP60R600C6_L0

******

.SUBCKT IPA60R600C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     17.5
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 5.065  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.426 TC=15m
.MODEL MVDR NMOS (KP=15.24 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 13.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=5.27n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=1p  N=1.08  RS=33u  EG=1.12  TT=400n)
Rdiode  d1  21    11.94m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.91n
.MODEL     DGD    D(M=0.88   CJO=0.91n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.44n

.ENDS  IPA60R600C6_L0

******

.SUBCKT IPD60R750C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 4.258  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.506 TC=15m
.MODEL MVDR NMOS (KP=12.81 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 11.2p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=4.43n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.9p  N=1.08  RS=39u  EG=1.12  TT=400n)
Rdiode  d1  21    14.21m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.77n
.MODEL     DGD    D(M=0.88   CJO=0.77n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.37n

.ENDS  IPD60R750C6_L0

******

.SUBCKT IPP60R750C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 4.258  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.506 TC=15m
.MODEL MVDR NMOS (KP=12.81 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 11.2p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=4.43n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.9p  N=1.08  RS=39u  EG=1.12  TT=400n)
Rdiode  d1  21    14.21m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.77n
.MODEL     DGD    D(M=0.88   CJO=0.77n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.37n

.ENDS  IPP60R750C6_L0

******

.SUBCKT IPA60R750C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 4.258  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.506 TC=15m
.MODEL MVDR NMOS (KP=12.81 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 11.2p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=4.43n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.9p  N=1.08  RS=39u  EG=1.12  TT=400n)
Rdiode  d1  21    14.21m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.77n
.MODEL     DGD    D(M=0.88   CJO=0.77n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.37n

.ENDS  IPA60R750C6_L0

******

.SUBCKT IPD60R950C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 3.188  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.676 TC=15m
.MODEL MVDR NMOS (KP=9.59 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 8.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=3.31n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.6p  N=1.08  RS=53u  EG=1.12  TT=400n)
Rdiode  d1  21    18.97m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.57n
.MODEL     DGD    D(M=0.88   CJO=0.57n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.28n

.ENDS  IPD60R950C6_L0

******

.SUBCKT IPP60R950C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 3.188  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.676 TC=15m
.MODEL MVDR NMOS (KP=9.59 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 8.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=3.31n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.6p  N=1.08  RS=53u  EG=1.12  TT=400n)
Rdiode  d1  21    18.97m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.57n
.MODEL     DGD    D(M=0.88   CJO=0.57n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.28n

.ENDS  IPP60R950C6_L0

******

.SUBCKT IPA60R950C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 3.188  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.676 TC=15m
.MODEL MVDR NMOS (KP=9.59 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 8.3p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=3.31n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.6p  N=1.08  RS=53u  EG=1.12  TT=400n)
Rdiode  d1  21    18.97m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.57n
.MODEL     DGD    D(M=0.88   CJO=0.57n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.28n

.ENDS  IPA60R950C6_L0

******

.SUBCKT IPD60R1K4C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 2.281  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.945 TC=15m
.MODEL MVDR NMOS (KP=6.86 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=2.37n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.5p  N=1.08  RS=73u  EG=1.12  TT=400n)
Rdiode  d1  21    26.52m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.41n
.MODEL     DGD    D(M=0.88   CJO=0.41n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.2n

.ENDS  IPD60R1K4C6_L0

******

.SUBCKT IPP60R1K4C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 2.281  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    0.945 TC=15m
.MODEL MVDR NMOS (KP=6.86 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=2.37n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.5p  N=1.08  RS=73u  EG=1.12  TT=400n)
Rdiode  d1  21    26.52m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.41n
.MODEL     DGD    D(M=0.88   CJO=0.41n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.2n

.ENDS  IPP60R1K4C6_L0

******

.SUBCKT IPL60R1K5C6S_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 2.281  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    1.039 TC=15m
.MODEL MVDR NMOS (KP=6.86 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 6p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=2.37n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.5p  N=1.08  RS=73u  EG=1.12  TT=750n)
Rdiode  d1  21    26.52m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.41n
.MODEL     DGD    D(M=0.88   CJO=0.41n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.2n

.ENDS  IPL60R1K5C6S_L0

******

.SUBCKT IPL60R2K1C6S_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 1.588  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    1.492 TC=15m
.MODEL MVDR NMOS (KP=4.78 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.2p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=1.65n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.3p  N=1.08  RS=106u  EG=1.12  TT=750n)
Rdiode  d1  21    38.1m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.29n
.MODEL     DGD    D(M=0.88   CJO=0.29n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.14n

.ENDS  IPL60R2K1C6S_L0

******

.SUBCKT IPD60R2K0C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 1.588  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    1.357 TC=15m
.MODEL MVDR NMOS (KP=4.78 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.2p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=1.65n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.3p  N=1.08  RS=106u  EG=1.12  TT=400n)
Rdiode  d1  21    38.1m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.29n
.MODEL     DGD    D(M=0.88   CJO=0.29n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.14n

.ENDS  IPD60R2K0C6_L0

******

.SUBCKT IPP60R2K0C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 1.588  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    1.357 TC=15m
.MODEL MVDR NMOS (KP=4.78 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 4.2p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=1.65n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.3p  N=1.08  RS=106u  EG=1.12  TT=400n)
Rdiode  d1  21    38.1m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.29n
.MODEL     DGD    D(M=0.88   CJO=0.29n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.14n

.ENDS  IPP60R2K0C6_L0

******

.SUBCKT IPD60R3K3C6_L0  drain  gate  source

Lg     gate  g1    3n
Ld     drain d1    1n
Ls     source s1   2n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 1.058  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    2.036 TC=15m
.MODEL MVDR NMOS (KP=3.18 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 2.8p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=1.1n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.2p  N=1.08  RS=158u  EG=1.12  TT=400n)
Rdiode  d1  21    57.14m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.19n
.MODEL     DGD    D(M=0.88   CJO=0.19n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.09n

.ENDS  IPD60R3K3C6_L0

******

.SUBCKT IPP60R3K3C6_L0  drain  gate  source

Lg     gate  g1    4n
Ld     drain d1    2.5n
Ls     source s1   2.5n
Rs      s1    s2   2m

Rg     g1    g2     16
M1      d2    g2    s2    s2    DMOS    L=1u   W=1u
.MODEL DMOS NMOS ( KP= 1.058  VTO=3.85  THETA=0  VMAX=1.5e5  ETA=0  LEVEL=3)
Rd     d2    d1a    2.036 TC=15m
.MODEL MVDR NMOS (KP=3.18 VTO=-1   LAMBDA=0.2)
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 2.8p
Dbd     s2    d2    Dbt
.MODEL     Dbt    D(BV=600   M=0.9  CJO=1.1n  VJ=0.5V)
Dbody   s2   21    DBODY
.MODEL DBODY  D(IS=0.2p  N=1.08  RS=158u  EG=1.12  TT=400n)
Rdiode  d1  21    57.14m TC=6m

.MODEL   sw    NMOS(VTO=0  KP=10   LEVEL=1)
Maux      g2   c    a    a   sw
Maux2     b    d    g2    g2   sw
Eaux      c    a    d2    g2   1
Eaux2     d    g2   d2    g2   -1
Cox       b    d2   0.19n
.MODEL     DGD    D(M=0.88   CJO=0.19n   VJ=0.5)
Rpar      b    d2   1Meg
Dgd       a    d2   DGD
Rpar2     d2   a    10Meg
Cgs     g2    s2    0.09n

.ENDS  IPP60R3K3C6_L0

******

.SUBCKT IPW60R041C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=0.7       Ls=5n        Ld=3n        Lg=5n
.PARAM act=59.22    Inn=44.4     Unn=10       Rmax=41m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPW60R070C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=0.85      Ls=5n        Ld=3n        Lg=5n
.PARAM act=34.42    Inn=25.8     Unn=10       Rmax=70m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R074C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=0.6       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=27.98    Inn=20.985   Unn=10       Rmax=74m

X1  dd g s Tj Tj cool_600_i240_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPW60R099C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=1.6       Ls=5n        Ld=3n        Lg=5n
.PARAM act=24.12    Inn=18.1     Unn=10       Rmax=99m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R099C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=1.6       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=24.12    Inn=18.1     Unn=10       Rmax=99m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R099C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=1.6       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=24.12    Inn=18.1     Unn=10       Rmax=99m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPW60R125C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=3.7       Ls=5n        Ld=3n        Lg=5n
.PARAM act=19.28    Inn=14.5     Unn=10       Rmax=125m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R125C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=3.7       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=19.28    Inn=14.5     Unn=10       Rmax=125m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R125C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=3.7       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=19.28    Inn=14.5     Unn=10       Rmax=125m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPW60R160C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=6.4       Ls=5n        Ld=3n        Lg=5n
.PARAM act=15.07    Inn=11.3     Unn=10       Rmax=160m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R160C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=6.4       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=15.07    Inn=11.3     Unn=10       Rmax=160m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R160C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=6.4       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=15.07    Inn=11.3     Unn=10       Rmax=160m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPW60R190C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=8.5       Ls=5n        Ld=3n        Lg=5n
.PARAM act=12.69    Inn=9.5      Unn=10       Rmax=190m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R190C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=8.5       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=12.69    Inn=9.5      Unn=10       Rmax=190m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R190C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=8.5       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=12.69    Inn=9.5      Unn=10       Rmax=190m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPW60R280C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=11.5      Ls=5n        Ld=3n        Lg=5n
.PARAM act=8.62     Inn=6.5      Unn=10       Rmax=280m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R280C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=11.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=8.62     Inn=6.5      Unn=10       Rmax=280m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R280C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=11.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=8.62     Inn=6.5      Unn=10       Rmax=280m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R380C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=17.5      Ls=2n        Ld=1n        Lg=3n
.PARAM act=6.34     Inn=4.8      Unn=10       Rmax=380m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R380C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=6.34     Inn=4.8      Unn=10       Rmax=380m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R380C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=6.34     Inn=4.8      Unn=10       Rmax=380m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R450C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=5.6135   Inn=4.2      Unn=10       Rmax=450m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R450C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=5.6135   Inn=4.2      Unn=10       Rmax=450m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R450C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=5.6135   Inn=4.2      Unn=10       Rmax=450m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R520C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16.5      Ls=2n        Ld=1n        Lg=3n
.PARAM act=4.64     Inn=3.5      Unn=10       Rmax=520m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R520C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.64     Inn=3.5      Unn=10       Rmax=520m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R520C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.64     Inn=3.5      Unn=10       Rmax=520m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R600C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=17.5      Ls=2n        Ld=1n        Lg=3n
.PARAM act=4.02     Inn=3.0      Unn=10       Rmax=600m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R600C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.02     Inn=3.0      Unn=10       Rmax=600m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R600C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.02     Inn=3.0      Unn=10       Rmax=600m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R750C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=3.379    Inn=2.5      Unn=10       Rmax=750m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R750C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=3.379    Inn=2.5      Unn=10       Rmax=750m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R750C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=3.379    Inn=2.5      Unn=10       Rmax=750m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R950C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=2.53     Inn=1.9      Unn=10       Rmax=950m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R950C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=2.53     Inn=1.9      Unn=10       Rmax=950m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPA60R950C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=2.53     Inn=1.9      Unn=10       Rmax=950m

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R1K4C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=1.81     Inn=1.4      Unn=10       Rmax=1.4K

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R1K4C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=1.81     Inn=1.4      Unn=10       Rmax=1.4K

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPL60R1K5C6S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=4n
.PARAM act=1.81     Inn=1.4      Unn=10       Rmax=1.5K

X1  dd g s Tj Tj cool_600_is_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPL60R2K1C6S_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=4n
.PARAM act=1.26     Inn=0.9      Unn=10       Rmax=2.1K

X1  dd g s Tj Tj cool_600_is_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R2K0C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=1.26     Inn=0.9      Unn=10       Rmax=2.0K

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R2K0C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=1.26     Inn=0.9      Unn=10       Rmax=2.0K

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPD60R3K3C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=0.84     Inn=0.6      Unn=10       Rmax=3.0K

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPP60R3K3C6_L1 drain gate source PARAMS: dVth=0 dRdson=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=0.84     Inn=0.6      Unn=10       Rmax=3.0K

X1  dd g s Tj Tj cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=0
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

E1    Tj     w      VALUE={TEMP}
R1    w      0      1u

.ENDS

**********

.SUBCKT IPW60R041C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=0.7       Ls=5n        Ld=3n        Lg=5n
.PARAM act=59.22    Inn=44.4     Unn=10       Rmax=41m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     569.693u
C_CZth2      0      1     3.435m
C_CZth3      0      2     4.85m
C_CZth4      0      3     27.57m
C_CZth5      0      4     150.724m
C_CZth6      0      Tcase 500m
C_CZth7      0      6     1.9
C_CZth8      0      7     2
R_Rth1       Tj     1     {2.86m+lzth*742.46u}
R_Rth2       1      2     {3.95m+lzth*1.02m}
R_Rth3       2      3     {22.17m+lzth*5.75m}
R_Rth4       3      4     {41.71m+lzth*90.76m}
R_Rth5       4      Tcase {61.34m+lzth*89.69m}
R_Rth6       Tcase  6     200m
R_Rth7       6      7     6.3

.ENDS

**********

.SUBCKT IPW60R070C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=0.85      Ls=5n        Ld=3n        Lg=5n
.PARAM act=34.42    Inn=25.8     Unn=10       Rmax=70m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     331.119u
C_CZth2      0      1     1.997m
C_CZth3      0      2     2.819m
C_CZth4      0      3     16.025m
C_CZth5      0      4     87.604m
C_CZth6      0      Tcase 500m
C_CZth7      0      6     1.9
C_CZth8      0      7     2
R_Rth1       Tj     1     {4.93m+lzth*1.28m}
R_Rth2       1      2     {6.8m+lzth*1.76m}
R_Rth3       2      3     {38.14m+lzth*9.89m}
R_Rth4       3      4     {66.33m+lzth*47.66m}
R_Rth5       4      Tcase {97.39m+lzth*45.83m}
R_Rth6       Tcase  6     200m
R_Rth7       6      7     6.3

.ENDS

**********

.SUBCKT IPP60R074C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=0.6       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=27.98    Inn=20.985   Unn=10       Rmax=74m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i240_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     269.166u
C_CZth2      0      1     1.623m
C_CZth3      0      2     2.291m
C_CZth4      0      3     13.026m
C_CZth5      0      4     34.228m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {6.06m+lzth*1.57m}
R_Rth2       1      2     {8.36m+lzth*2.17m}
R_Rth3       2      3     {46.92m+lzth*12.16m}
R_Rth4       3      4     {79.42m+lzth*13.95m}
R_Rth5       4      Tcase {77.7m+lzth*11.69m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPW60R099C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=1.6       Ls=5n        Ld=3n        Lg=5n
.PARAM act=24.12    Inn=18.1     Unn=10       Rmax=99m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     232.033u
C_CZth2      0      1     1.399m
C_CZth3      0      2     1.975m
C_CZth4      0      3     11.229m
C_CZth5      0      4     61.389m
C_CZth6      0      Tcase 500m
C_CZth7      0      6     1.9
C_CZth8      0      7     2
R_Rth1       Tj     1     {7.03m+lzth*1.82m}
R_Rth2       1      2     {9.7m+lzth*2.51m}
R_Rth3       2      3     {54.43m+lzth*14.11m}
R_Rth4       3      4     {90.36m+lzth*70.06m}
R_Rth5       4      Tcase {132.53m+lzth*67.44m}
R_Rth6       Tcase  6     200m
R_Rth7       6      7     6.3

.ENDS

**********

.SUBCKT IPP60R099C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=1.6       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=24.12    Inn=18.1     Unn=10       Rmax=99m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     232.033u
C_CZth2      0      1     1.399m
C_CZth3      0      2     1.975m
C_CZth4      0      3     11.229m
C_CZth5      0      4     29.315m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {7.03m+lzth*1.82m}
R_Rth2       1      2     {9.7m+lzth*2.51m}
R_Rth3       2      3     {54.43m+lzth*14.11m}
R_Rth4       3      4     {90.36m+lzth*92.15m}
R_Rth5       4      Tcase {88.36m+lzth*89.53m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R099C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=1.6       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=24.12    Inn=18.1     Unn=10       Rmax=99m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     232.033u
C_CZth2      0      1     1.399m
C_CZth3      0      2     1.975m
C_CZth4      0      3     11.229m
C_CZth5      0      4     35.178m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {7.03m+lzth*1.82m}
R_Rth2       1      2     {9.7m+lzth*2.51m}
R_Rth3       2      3     {54.43m+lzth*14.11m}
R_Rth4       3      4     {90.36m+lzth*51.31m}
R_Rth5       4      5     {88.36m+lzth*48.69m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*1.13}
.ENDS

**********

.SUBCKT IPW60R125C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=3.7       Ls=5n        Ld=3n        Lg=5n
.PARAM act=19.28    Inn=14.5     Unn=10       Rmax=125m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     185.473u
C_CZth2      0      1     1.118m
C_CZth3      0      2     1.579m
C_CZth4      0      3     8.976m
C_CZth5      0      4     49.07m
C_CZth6      0      Tcase 500m
C_CZth7      0      6     1.9
C_CZth8      0      7     2
R_Rth1       Tj     1     {8.8m+lzth*2.28m}
R_Rth2       1      2     {12.13m+lzth*3.15m}
R_Rth3       2      3     {68.09m+lzth*17.65m}
R_Rth4       3      4     {109.66m+lzth*95.4m}
R_Rth5       4      Tcase {160.72m+lzth*92.12m}
R_Rth6       Tcase  6     200m
R_Rth7       6      7     6.3

.ENDS

**********

.SUBCKT IPP60R125C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=3.7       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=19.28    Inn=14.5     Unn=10       Rmax=125m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     185.473u
C_CZth2      0      1     1.118m
C_CZth3      0      2     1.579m
C_CZth4      0      3     8.976m
C_CZth5      0      4     23.155m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {8.8m+lzth*2.28m}
R_Rth2       1      2     {12.13m+lzth*3.15m}
R_Rth3       2      3     {68.09m+lzth*17.65m}
R_Rth4       3      4     {109.66m+lzth*122.19m}
R_Rth5       4      Tcase {107.15m+lzth*118.91m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R125C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=3.7       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=19.28    Inn=14.5     Unn=10       Rmax=125m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     185.473u
C_CZth2      0      1     1.118m
C_CZth3      0      2     1.579m
C_CZth4      0      3     8.976m
C_CZth5      0      4     27.786m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {8.8m+lzth*2.28m}
R_Rth2       1      2     {12.13m+lzth*3.15m}
R_Rth3       2      3     {68.09m+lzth*17.65m}
R_Rth4       3      4     {109.66m+lzth*60.86m}
R_Rth5       4      5     {107.15m+lzth*57.58m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*1.1}
.ENDS

**********

.SUBCKT IPW60R160C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=6.4       Ls=5n        Ld=3n        Lg=5n
.PARAM act=15.07    Inn=11.3     Unn=10       Rmax=160m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     144.973u
C_CZth2      0      1     874.22u
C_CZth3      0      2     1.234m
C_CZth4      0      3     7.016m
C_CZth5      0      4     38.355m
C_CZth6      0      Tcase 500m
C_CZth7      0      6     1.9
C_CZth8      0      7     2
R_Rth1       Tj     1     {11.25m+lzth*2.92m}
R_Rth2       1      2     {15.52m+lzth*4.02m}
R_Rth3       2      3     {87.11m+lzth*22.58m}
R_Rth4       3      4     {135.28m+lzth*118.7m}
R_Rth5       4      Tcase {198.1m+lzth*114.51m}
R_Rth6       Tcase  6     200m
R_Rth7       6      7     6.3

.ENDS

**********

.SUBCKT IPP60R160C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=6.4       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=15.07    Inn=11.3     Unn=10       Rmax=160m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     144.973u
C_CZth2      0      1     874.22u
C_CZth3      0      2     1.234m
C_CZth4      0      3     7.016m
C_CZth5      0      4     17.796m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {11.25m+lzth*2.92m}
R_Rth2       1      2     {15.52m+lzth*4.02m}
R_Rth3       2      3     {87.11m+lzth*22.58m}
R_Rth4       3      4     {135.28m+lzth*151.72m}
R_Rth5       4      Tcase {132.07m+lzth*147.52m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R160C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=6.4       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=15.07    Inn=11.3     Unn=10       Rmax=160m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     144.973u
C_CZth2      0      1     874.22u
C_CZth3      0      2     1.234m
C_CZth4      0      3     7.016m
C_CZth5      0      4     21.355m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {11.25m+lzth*2.92m}
R_Rth2       1      2     {15.52m+lzth*4.02m}
R_Rth3       2      3     {87.11m+lzth*22.58m}
R_Rth4       3      4     {135.28m+lzth*70.11m}
R_Rth5       4      5     {132.07m+lzth*65.91m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*1.02}
.ENDS

**********

.SUBCKT IPW60R190C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=8.5       Ls=5n        Ld=3n        Lg=5n
.PARAM act=12.69    Inn=9.5      Unn=10       Rmax=190m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     122.077u
C_CZth2      0      1     736.155u
C_CZth3      0      2     1.039m
C_CZth4      0      3     5.908m
C_CZth5      0      4     32.298m
C_CZth6      0      Tcase 500m
C_CZth7      0      6     1.9
C_CZth8      0      7     2
R_Rth1       Tj     1     {13.37m+lzth*3.46m}
R_Rth2       1      2     {18.43m+lzth*4.78m}
R_Rth3       2      3     {103.45m+lzth*26.82m}
R_Rth4       3      4     {156.2m+lzth*139.94m}
R_Rth5       4      Tcase {228.58m+lzth*134.96m}
R_Rth6       Tcase  6     200m
R_Rth7       6      7     6.3

.ENDS

**********

.SUBCKT IPP60R190C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=8.5       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=12.69    Inn=9.5      Unn=10       Rmax=190m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     122.077u
C_CZth2      0      1     736.155u
C_CZth3      0      2     1.039m
C_CZth4      0      3     5.908m
C_CZth5      0      4     14.767m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {13.37m+lzth*3.46m}
R_Rth2       1      2     {18.43m+lzth*4.78m}
R_Rth3       2      3     {103.45m+lzth*26.82m}
R_Rth4       3      4     {156.2m+lzth*178.04m}
R_Rth5       4      Tcase {152.39m+lzth*173.06m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R190C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=8.5       Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=12.69    Inn=9.5      Unn=10       Rmax=190m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     122.077u
C_CZth2      0      1     736.155u
C_CZth3      0      2     1.039m
C_CZth4      0      3     5.908m
C_CZth5      0      4     17.72m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {13.37m+lzth*3.46m}
R_Rth2       1      2     {18.43m+lzth*4.78m}
R_Rth3       2      3     {103.45m+lzth*26.82m}
R_Rth4       3      4     {156.2m+lzth*77.25m}
R_Rth5       4      5     {152.39m+lzth*72.27m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*971.59m}
.ENDS

**********

.SUBCKT IPW60R280C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=11.5      Ls=5n        Ld=3n        Lg=5n
.PARAM act=8.62     Inn=6.5      Unn=10       Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     82.924u
C_CZth2      0      1     500.051u
C_CZth3      0      2     705.955u
C_CZth4      0      3     4.013m
C_CZth5      0      4     21.939m
C_CZth6      0      Tcase 500m
C_CZth7      0      6     1.9
C_CZth8      0      7     2
R_Rth1       Tj     1     {19.68m+lzth*5.1m}
R_Rth2       1      2     {27.14m+lzth*7.04m}
R_Rth3       2      3     {152.3m+lzth*39.48m}
R_Rth4       3      4     {213.42m+lzth*215.73m}
R_Rth5       4      Tcase {311.73m+lzth*208.4m}
R_Rth6       Tcase  6     200m
R_Rth7       6      7     6.3

.ENDS

**********

.SUBCKT IPP60R280C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=11.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=8.62     Inn=6.5      Unn=10       Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     82.924u
C_CZth2      0      1     500.051u
C_CZth3      0      2     705.955u
C_CZth4      0      3     4.013m
C_CZth5      0      4     9.586m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {19.68m+lzth*5.1m}
R_Rth2       1      2     {27.14m+lzth*7.04m}
R_Rth3       2      3     {152.3m+lzth*39.48m}
R_Rth4       3      4     {213.42m+lzth*267.68m}
R_Rth5       4      Tcase {207.82m+lzth*260.35m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R280C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=11.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=8.62     Inn=6.5      Unn=10       Rmax=280m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     82.924u
C_CZth2      0      1     500.051u
C_CZth3      0      2     705.955u
C_CZth4      0      3     4.013m
C_CZth5      0      4     11.504m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {19.68m+lzth*5.1m}
R_Rth2       1      2     {27.14m+lzth*7.04m}
R_Rth3       2      3     {152.3m+lzth*39.48m}
R_Rth4       3      4     {213.42m+lzth*101.99m}
R_Rth5       4      5     {207.82m+lzth*94.66m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*931.39m}
.ENDS

**********

.SUBCKT IPD60R380C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=17.5      Ls=2n        Ld=1n        Lg=3n
.PARAM act=6.34     Inn=4.8      Unn=10       Rmax=380m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     60.99u
C_CZth2      0      1     367.787u
C_CZth3      0      2     519.229u
C_CZth4      0      3     2.952m
C_CZth5      0      4     4.184m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {26.75m+lzth*6.94m}
R_Rth2       1      2     {36.9m+lzth*9.57m}
R_Rth3       2      3     {207.06m+lzth*53.68m}
R_Rth4       3      4     {269.51m+lzth*351.88m}
R_Rth5       4      Tcase {195.8m+lzth*341.92m}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R380C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=6.34     Inn=4.8      Unn=10       Rmax=380m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     60.99u
C_CZth2      0      1     367.787u
C_CZth3      0      2     519.229u
C_CZth4      0      3     2.952m
C_CZth5      0      4     6.684m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {26.75m+lzth*6.94m}
R_Rth2       1      2     {36.9m+lzth*9.57m}
R_Rth3       2      3     {207.06m+lzth*53.68m}
R_Rth4       3      4     {269.51m+lzth*318.84m}
R_Rth5       4      Tcase {261.89m+lzth*308.87m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R380C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=6.34     Inn=4.8      Unn=10       Rmax=380m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     60.99u
C_CZth2      0      1     367.787u
C_CZth3      0      2     519.229u
C_CZth4      0      3     2.952m
C_CZth5      0      4     8.021m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {26.75m+lzth*6.94m}
R_Rth2       1      2     {36.9m+lzth*9.57m}
R_Rth3       2      3     {207.06m+lzth*53.68m}
R_Rth4       3      4     {269.51m+lzth*113.9m}
R_Rth5       4      5     {261.89m+lzth*103.94m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*809.87m}
.ENDS

**********

.SUBCKT IPD60R450C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=5.6135   Inn=4.2      Unn=10       Rmax=450m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     54.002u
C_CZth2      0      1     325.643u
C_CZth3      0      2     459.73u
C_CZth4      0      3     2.613m
C_CZth5      0      4     3.705m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {30.21m+lzth*7.83m}
R_Rth2       1      2     {41.67m+lzth*10.8m}
R_Rth3       2      3     {233.86m+lzth*60.63m}
R_Rth4       3      4     {294.33m+lzth*407.15m}
R_Rth5       4      Tcase {217.62m+lzth*395.89m}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R450C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=5.6135   Inn=4.2      Unn=10       Rmax=450m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     54.002u
C_CZth2      0      1     325.643u
C_CZth3      0      2     459.73u
C_CZth4      0      3     2.613m
C_CZth5      0      4     5.76m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {30.21m+lzth*7.83m}
R_Rth2       1      2     {41.67m+lzth*10.8m}
R_Rth3       2      3     {233.86m+lzth*60.63m}
R_Rth4       3      4     {294.33m+lzth*373.1m}
R_Rth5       4      Tcase {285.72m+lzth*361.84m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R450C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=5.6135   Inn=4.2      Unn=10       Rmax=450m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     54.002u
C_CZth2      0      1     325.643u
C_CZth3      0      2     459.73u
C_CZth4      0      3     2.613m
C_CZth5      0      4     6.911m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {30.21m+lzth*7.83m}
R_Rth2       1      2     {41.67m+lzth*10.8m}
R_Rth3       2      3     {233.86m+lzth*60.63m}
R_Rth4       3      4     {294.33m+lzth*134.27m}
R_Rth5       4      5     {285.72m+lzth*123.01m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*877.66m}
.ENDS

**********

.SUBCKT IPD60R520C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16.5      Ls=2n        Ld=1n        Lg=3n
.PARAM act=4.64     Inn=3.5      Unn=10       Rmax=520m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     44.637u
C_CZth2      0      1     269.169u
C_CZth3      0      2     380.003u
C_CZth4      0      3     2.16m
C_CZth5      0      4     3.062m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {36.55m+lzth*9.48m}
R_Rth2       1      2     {50.42m+lzth*13.07m}
R_Rth3       2      3     {282.93m+lzth*73.35m}
R_Rth4       3      4     {335.98m+lzth*428.88m}
R_Rth5       4      Tcase {254.08m+lzth*415.27m}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R520C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.64     Inn=3.5      Unn=10       Rmax=520m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     44.637u
C_CZth2      0      1     269.169u
C_CZth3      0      2     380.003u
C_CZth4      0      3     2.16m
C_CZth5      0      4     4.52m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {36.55m+lzth*9.48m}
R_Rth2       1      2     {50.42m+lzth*13.07m}
R_Rth3       2      3     {282.93m+lzth*73.35m}
R_Rth4       3      4     {335.98m+lzth*393.14m}
R_Rth5       4      Tcase {325.56m+lzth*379.53m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R520C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.64     Inn=3.5      Unn=10       Rmax=520m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     44.637u
C_CZth2      0      1     269.169u
C_CZth3      0      2     380.003u
C_CZth4      0      3     2.16m
C_CZth5      0      4     5.425m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {36.55m+lzth*9.48m}
R_Rth2       1      2     {50.42m+lzth*13.07m}
R_Rth3       2      3     {282.93m+lzth*73.35m}
R_Rth4       3      4     {335.98m+lzth*141.98m}
R_Rth5       4      5     {325.56m+lzth*128.36m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*802.33m}
.ENDS

**********

.SUBCKT IPD60R600C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=17.5      Ls=2n        Ld=1n        Lg=3n
.PARAM act=4.02     Inn=3.0      Unn=10       Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     38.672u
C_CZth2      0      1     233.203u
C_CZth3      0      2     329.227u
C_CZth4      0      3     1.872m
C_CZth5      0      4     2.653m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {42.19m+lzth*10.94m}
R_Rth2       1      2     {58.19m+lzth*15.09m}
R_Rth3       2      3     {326.56m+lzth*84.66m}
R_Rth4       3      4     {369.43m+lzth*412.72m}
R_Rth5       4      Tcase {283.21m+lzth*397.01m}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R600C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.02     Inn=3.0      Unn=10       Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     38.672u
C_CZth2      0      1     233.203u
C_CZth3      0      2     329.227u
C_CZth4      0      3     1.872m
C_CZth5      0      4     3.731m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {42.19m+lzth*10.94m}
R_Rth2       1      2     {58.19m+lzth*15.09m}
R_Rth3       2      3     {326.56m+lzth*84.66m}
R_Rth4       3      4     {369.43m+lzth*375.63m}
R_Rth5       4      Tcase {357.41m+lzth*359.91m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R600C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=17.5      Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=4.02     Inn=3.0      Unn=10       Rmax=600m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     38.672u
C_CZth2      0      1     233.203u
C_CZth3      0      2     329.227u
C_CZth4      0      3     1.872m
C_CZth5      0      4     4.478m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {42.19m+lzth*10.94m}
R_Rth2       1      2     {58.19m+lzth*15.09m}
R_Rth3       2      3     {326.56m+lzth*84.66m}
R_Rth4       3      4     {369.43m+lzth*161.44m}
R_Rth5       4      5     {357.41m+lzth*145.72m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*828.37m}
.ENDS

**********

.SUBCKT IPD60R750C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=3.379    Inn=2.5      Unn=10       Rmax=750m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     32.506u
C_CZth2      0      1     196.018u
C_CZth3      0      2     276.731u
C_CZth4      0      3     1.573m
C_CZth5      0      4     2.23m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {50.19m+lzth*13.01m}
R_Rth2       1      2     {69.23m+lzth*17.95m}
R_Rth3       2      3     {388.51m+lzth*100.72m}
R_Rth4       3      4     {412.03m+lzth*623.48m}
R_Rth5       4      Tcase {320.09m+lzth*604.78m}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R750C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=3.379    Inn=2.5      Unn=10       Rmax=750m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     32.506u
C_CZth2      0      1     196.018u
C_CZth3      0      2     276.731u
C_CZth4      0      3     1.573m
C_CZth5      0      4     2.915m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {50.19m+lzth*13.01m}
R_Rth2       1      2     {69.23m+lzth*17.95m}
R_Rth3       2      3     {388.51m+lzth*100.72m}
R_Rth4       3      4     {412.03m+lzth*584.66m}
R_Rth5       4      Tcase {397.73m+lzth*565.96m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R750C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=3.379    Inn=2.5      Unn=10       Rmax=750m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     32.506u
C_CZth2      0      1     196.018u
C_CZth3      0      2     276.731u
C_CZth4      0      3     1.573m
C_CZth5      0      4     3.498m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {50.19m+lzth*13.01m}
R_Rth2       1      2     {69.23m+lzth*17.95m}
R_Rth3       2      3     {388.51m+lzth*100.72m}
R_Rth4       3      4     {412.03m+lzth*164.11m}
R_Rth5       4      5     {397.73m+lzth*145.41m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*741.1m}
.ENDS

**********

.SUBCKT IPD60R950C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=2.53     Inn=1.9      Unn=10       Rmax=950m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     24.338u
C_CZth2      0      1     146.767u
C_CZth3      0      2     207.2u
C_CZth4      0      3     1.178m
C_CZth5      0      4     1.67m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {67.04m+lzth*17.38m}
R_Rth2       1      2     {92.46m+lzth*23.97m}
R_Rth3       2      3     {518.89m+lzth*134.52m}
R_Rth4       3      4     {486.96m+lzth*854.79m}
R_Rth5       4      Tcase {384.19m+lzth*829.81m}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R950C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=2.53     Inn=1.9      Unn=10       Rmax=950m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     24.338u
C_CZth2      0      1     146.767u
C_CZth3      0      2     207.2u
C_CZth4      0      3     1.178m
C_CZth5      0      4     2m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {67.04m+lzth*17.38m}
R_Rth2       1      2     {92.46m+lzth*23.97m}
R_Rth3       2      3     {518.89m+lzth*134.52m}
R_Rth4       3      4     {486.96m+lzth*812.95m}
R_Rth5       4      Tcase {467.85m+lzth*787.98m}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPA60R950C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=2.53     Inn=1.9      Unn=10       Rmax=950m
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     24.338u
C_CZth2      0      1     146.767u
C_CZth3      0      2     207.2u
C_CZth4      0      3     1.178m
C_CZth5      0      4     2.202m
C_CZth6      0      5     18m
C_CZth7      0      6     500m
C_CZth8      0      7     600m
R_Rth1       Tj     1     {67.04m+lzth*17.38m}
R_Rth2       1      2     {92.46m+lzth*23.97m}
R_Rth3       2      3     {518.89m+lzth*134.52m}
R_Rth4       3      4     {486.96m+lzth*178m}
R_Rth5       4      5     {467.85m+lzth*153.02m}
R_Rth6       5      6     400m
R_Rth7       6      7     5
R_Rth8       5      Tcase {2.1+lzth*659.91m}
.ENDS

**********

.SUBCKT IPD60R1K4C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=1.81     Inn=1.4      Unn=10       Rmax=1.4K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     17.412u
C_CZth2      0      1     104.999u
C_CZth3      0      2     148.234u
C_CZth4      0      3     842.66u
C_CZth5      0      4     1.195m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {93.7m+lzth*24.29m}
R_Rth2       1      2     {129.25m+lzth*33.51m}
R_Rth3       2      3     {725.3m+lzth*188.03m}
R_Rth4       3      4     {577.12m+lzth*1.1}
R_Rth5       4      Tcase {459.64m+lzth*1.07}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R1K4C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=1.81     Inn=1.4      Unn=10       Rmax=1.4K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     17.412u
C_CZth2      0      1     104.999u
C_CZth3      0      2     148.234u
C_CZth4      0      3     842.66u
C_CZth5      0      4     2m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {93.7m+lzth*24.29m}
R_Rth2       1      2     {129.25m+lzth*33.51m}
R_Rth3       2      3     {725.3m+lzth*188.03m}
R_Rth4       3      4     {577.12m+lzth*1.06}
R_Rth5       4      Tcase {550.42m+lzth*1.02}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPL60R1K5C6S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=4n
.PARAM act=1.81     Inn=1.4      Unn=10       Rmax=1.5K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_is_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     17.412u
C_CZth2      0      1     104.999u
C_CZth3      0      2     148.234u
C_CZth4      0      3     842.66u
C_CZth5      0      4     1.195m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {93.7m+lzth*24.29m}
R_Rth2       1      2     {129.25m+lzth*33.51m}
R_Rth3       2      3     {725.3m+lzth*188.03m}
R_Rth4       3      4     {577.12m+lzth*1.25}
R_Rth5       4      Tcase {459.64m+lzth*1.22}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPL60R2K1C6S_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=4n
.PARAM act=1.26     Inn=0.9      Unn=10       Rmax=2.1K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_is_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     12.121u
C_CZth2      0      1     73.093u
C_CZth3      0      2     103.191u
C_CZth4      0      3     586.603u
C_CZth5      0      4     1m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {134.61m+lzth*34.9m}
R_Rth2       1      2     {185.66m+lzth*48.13m}
R_Rth3       2      3     {1.04+lzth*270.1m}
R_Rth4       3      4     {674.78m+lzth*1.46}
R_Rth5       4      Tcase {538.22m+lzth*1.41}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPD60R2K0C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=1.26     Inn=0.9      Unn=10       Rmax=2.0K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     12.121u
C_CZth2      0      1     73.093u
C_CZth3      0      2     103.191u
C_CZth4      0      3     586.603u
C_CZth5      0      4     1m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {134.61m+lzth*34.9m}
R_Rth2       1      2     {185.66m+lzth*48.13m}
R_Rth3       2      3     {1.04+lzth*270.1m}
R_Rth4       3      4     {674.78m+lzth*1.36}
R_Rth5       4      Tcase {538.22m+lzth*1.31}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R2K0C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=1.26     Inn=0.9      Unn=10       Rmax=2.0K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     12.121u
C_CZth2      0      1     73.093u
C_CZth3      0      2     103.191u
C_CZth4      0      3     586.603u
C_CZth5      0      4     2m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {134.61m+lzth*34.9m}
R_Rth2       1      2     {185.66m+lzth*48.13m}
R_Rth3       2      3     {1.04+lzth*270.1m}
R_Rth4       3      4     {674.78m+lzth*1.31}
R_Rth5       4      Tcase {636.43m+lzth*1.26}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT IPD60R3K3C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2n        Ld=1n        Lg=3n
.PARAM act=0.84     Inn=0.6      Unn=10       Rmax=3.0K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     8.081u
C_CZth2      0      1     48.729u
C_CZth3      0      2     68.794u
C_CZth4      0      3     500u
C_CZth5      0      4     1m
C_CZth6      0      Tcase 42.5m
C_CZth7      0      6     65m
C_CZth8      0      7     90m
R_Rth1       Tj     1     {201.91m+lzth*52.34m}
R_Rth2       1      2     {278.49m+lzth*72.2m}
R_Rth3       2      3     {1.56+lzth*405.16m}
R_Rth4       3      4     {780.39m+lzth*1.5}
R_Rth5       4      Tcase {617.17m+lzth*1.43}
R_Rth6       Tcase  6     500m
R_Rth7       6      7     50

.ENDS

**********

.SUBCKT IPP60R3K3C6_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0

.PARAM Rs=2m        Rg=16        Ls=2.5n      Ld=2.5n      Lg=4n
.PARAM act=0.84     Inn=0.6      Unn=10       Rmax=3.0K
.PARAM lzth={limit(Zthtype,0,1)}

X1  dd g s Tj 1 cool_600_i_var PARAMS: act={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} 
                                        +Rmax={Rmax} Rs={Rs} heat=1
L_Ld         drain  dd    {Ld}
R_Ld         drain  dd    10

L_Ls         source lsrs  {Ls}
R_Ls         source lsrs  10
R_Rs         s      lsrs  {Rs}

L_Lg         gate   lgrg  {Lg}
R_Lg         gate   lgrg  10
R_Rg         lgrg   g     {Rg}

C_CZth1      Tj     0     8.081u
C_CZth2      0      1     48.729u
C_CZth3      0      2     68.794u
C_CZth4      0      3     500u
C_CZth5      0      4     2m
C_CZth6      0      Tcase 140m
C_CZth7      0      6     500m
C_CZth8      0      7     450m
R_Rth1       Tj     1     {201.91m+lzth*52.34m}
R_Rth2       1      2     {278.49m+lzth*72.2m}
R_Rth3       2      3     {1.56+lzth*405.16m}
R_Rth4       3      4     {780.39m+lzth*1.45}
R_Rth5       4      Tcase {722.86m+lzth*1.37}
R_Rth6       Tcase  6     400m
R_Rth7       6      7     15.8

.ENDS

**********

.SUBCKT cool_600_i_var dd g s Tj t1 PARAMS: act=1 dVth=0 dR=0 Inn=1u Unn=10 Rmax=1 Rs=1u heat=1 
*
.PARAM  p666={4*SQRT(act)}
*
.PARAM Vth0=3.7
.PARAM Vmin=2.8     Vmax=4.7      
*
.PARAM fpar1=0.1265         fpar2=1.2825    
.PARAM fpar29=298           Tref=273           fpar3=4.7m
.PARAM fpar4=600m           fpar6=660
.PARAM fpar7=207m           fpar9=4
.PARAM fpar10=2.89          tt=400n
.PARAM fpar12=1.1           fpar13={1.97/act}  fpar14={48m/act}    fpar15=13 
.PARAM fpar16=-0.008        fpar17 ={0.1*4}
.PARAM fpar18=85.8u         fpar19=-29         fpar20=1.08         fpar21={Exp(fpar19)}
.PARAM fpar22={2.05*act}
.PARAM fpar23=0.91
.PARAM loge=0.43429448                     
*
.PARAM muth=1.08375                     
*
.PARAM Vth={Vth0+(Vmax-Vth0)*LIMIT(dVth,0,1)-(Vmin-Vth0)*LIMIT(dVth,-1,0)}
.PARAM p1={Unn-Inn*Rs-Vth0}
.PARAM p2={(((p1-SQRT(p1**2-4*fpar2/fpar22*Inn*(1+fpar1*p1)))/fpar2*fpar12+1)**2-1)/(4*fpar12)}
.PARAM p3={fpar15/(2*(Inn*(Inn*(Rmax-Rs)-p2)))}
.PARAM Rlim={p3*(-fpar15+SQRT(fpar15**2+4*(Rmax*Inn)**2-8*Rmax*Inn*(Inn*Rs+p2)+(2*p2+2*Inn*Rs)**2))}
.PARAM dRd={fpar13+IF(dVth==0,LIMIT(dR,0,1)*MAX(Rlim-fpar13,0),0)}
*
.FUNC  fpar24(Uee,p,pp,z1)  {IF(Uee>pp,(Uee-fpar2*z1)*z1,p*(pp-p)/fpar2*EXP((Uee-pp)/p))}
.FUNC  fpar25(Uds,p,Uee,z1,Tjx) {(fpar22/(1+fpar1*Uee)*(fpar29/Tjx)**muth)*fpar24(Uee,p,MIN(2*p,p+fpar2*Uds),z1)}
.FUNC  fpar28(Uds,Ugs,Tjx,p)  {fpar25(Uds,p,Ugs-Vth+fpar3*(Tjx-fpar29),MIN(Uds,(Ugs-Vth+fpar3*(Tjx-fpar29))/(2*fpar2)),Tjx)}
.FUNC  fpar26(Uds,Tjx)      {act*EXP(MIN(fpar19+(Uds-fpar6-fpar4*(Tjx-fpar29))/fpar7,23))}
.FUNC  fpar27(Uds,Ugs,Tjx) {sgn(Uds)*fpar28((SQRT(1+4*fpar12*abs(Uds))-1)/2/fpar12,Ugs,Tjx,fpar9*fpar18*Tjx)}
*
R1 g s 1G
G_G1 d s VALUE={fpar27(V(d,s),V(g,s),Tref+LIMIT(V(Tj),-200,999))}
Rd01 d s 500Meg
*
V_Ichannel d1 d 0
V_Iepi     dd d2 0  
*
G_G_Rd     d2 d1 VALUE 
+ {V(d2,d1)/( 
+ (1-fpar17)
+ *((dRd*0.5*(1+SQRT(1+4*(MAX(V(d2,d1),0)/fpar15)**(LIMIT(2+fpar16*(V(t1)+Tref-fpar29),0,3)))))
+ *((Tref+LIMIT(V(t1),-200,999))/fpar29)**fpar10)
+ + (fpar17)*((dRd*0.5*(1+SQRT(1+4*(MAX(V(d2,d1),0)/fpar15)**(LIMIT(2+fpar16*(V(t1)+Tref-fpar29),0,3)))))))}
*
R_R_ERd_g  d2 d1  10k
*
G_Rdiod    dd    dio2 VALUE {V(dd,dio2)/(fpar14*((Tref+LIMIT(V(t1),-200,999))/fpar29)**fpar23)}
R_Rdiod    dd    dio 500Meg
V_Idiode   dio2  dio 0
*
Dbody      s    di    DBODY
.MODEL DBODY  D(IS={fpar21*act}  N={fpar20}  RS=2u  EG=1.12  TT={tt})
*
Rd02       s    di 500Meg
G_diode2   s    di VALUE={-fpar26(V(di,s),Tref+LIMIT(V(t1),-200,999))}
V_Idio     dio  di 0
*

*Capacitance model:
*Cgd
.PARAM  cgdvgg=-0.1            cgducut=100 
.PARAM  cgda1={130p*act}    cgdb1=-1.7                 cgdC1_0={cgda1*EXP(cgdb1*cgdvgg)}
.PARAM  cgda2={80p*act}     cgdb2=-0.12                cgdC2_0={cgda2*EXP(cgdb2*cgdvgg)}
.PARAM  cgda3={4p*act}      cgdb3=-4      cgdc3=40     cgdC3_0={1/2*cgda3*(1+TANH((cgdvgg-cgdc3)/cgdb3))}
.PARAM  cgda4={1.2p*act}    cgdb4=200     cgdc4=400    cgdC4_0={1/2*cgda4*(1+TANH((cgdvgg-cgdc4)/cgdb4))}
.PARAM  cgda5={0.001p*p666}                            cgdC5_0={cgda5}
.PARAM  cgda6={0.3p*p666}   cgdb6=-600    cgdc6=40     cgdC6_0={1/2*cgda6*(1+TANH((cgdvgg-cgdc6)/cgdb6))}

*Cds
.PARAM  cdsvgg=0            cdsucut=100
.PARAM  cdsa1={400p*act}    cdsb1=-0.3                 cdsC1_0={cdsa1*EXP(cdsb1*cdsvgg)}
.PARAM  cdsa2={260p*act}    cdsb2=-0.05                cdsC2_0={cdsa2*EXP(cdsb2*cdsvgg)}
.PARAM  cdsa3={0p*act}      cdsb3=1       cdsc3=1      cdsC3_0={1/2*cdsa3*(1+TANH((cdsvgg-cdsc3)/cdsb3))}
.PARAM  cdsa4={5p*act}      cdsb4=-700    cdsc4=300    cdsC4_0={1/2*cdsa4*(1+TANH((cdsvgg-cdsc4)/cdsb4))}
.PARAM  cdsa5={0.001p*p666}                            cdsC5_0={cdsa5}
.PARAM  cdsa6={0.7p*p666}   cdsb6=-700    cdsc6=300    cdsC6_0={1/2*cdsa6*(1+TANH((cdsvgg-cdsc6)/cdsb6))}

*Cgs
.PARAM  cgs={act*110p}


.FUNC     cgdQges1(U)    {cgda1/cgdb1 * (EXP(cgdb1*U)-1)} 
.FUNC     cgdQges2(U)    {cgda2/cgdb2 * (EXP(cgdb2*U)-1)} 
.FUNC     cgdQges3(U)    {IF (U< cgducut, cgda3*U/2 + 1/2*cgda3*cgdb3*LOG10(COSH((U-cgdc3)/cgdb3))/loge 
+                         - 1/2*cgda3*cgdb3*LOG10(COSH((-cgdc3)/cgdb3))/loge, 
+                         cgda3*cgducut/2 + 1/2*cgda3*cgdb3*LOG10(COSH((cgducut-cgdc3)/cgdb3))/loge 
+                         - 1/2*cgda3*cgdb3*LOG10(COSH((-cgdc3)/cgdb3))/loge)}  
.FUNC     cgdQges4(U)    {cgda4*U/2 + 1/2*cgda4*cgdb4*LOG10(COSH((U-cgdc4)/cgdb4))/loge 
+                         - 1/2*cgda4*cgdb4*LOG10(COSH((-cgdc4)/cgdb4))/loge}  
.FUNC     cgdQges5(U)    {cgda5*U}
.FUNC     cgdQges6(U)    {cgda6*U/2 + 1/2*cgda6*cgdb6*LOG10(COSH((U-cgdc6)/cgdb6))/loge 
+                         - 1/2*cgda6*cgdb6*LOG10(COSH((-cgdc6)/cgdb6))/loge}  


*Cgd with voltage source
E1cgd    cgdhigh   cgdnint1  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges1(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC1_0}
C1cgd    cgdnint1  cgdlow   {cgdC1_0}
*
E2cgd    cgdhigh   cgdnint2  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges2(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC2_0}
C2cgd    cgdnint2  cgdlow   {cgdC2_0}
*
E3cgd    cgdhigh   cgdnint3  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges3(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC3_0}
C3cgd    cgdnint3  cgdlow   {cgdC3_0}
*
E4cgd    cgdhigh   cgdnint4  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges4(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC4_0}
C4cgd    cgdnint4  cgdlow   {cgdC4_0}
*
C5cgd    cgdhigh   cgdlow   {cgdC5_0}
*
E6cgd    cgdhigh   cgdnint6  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges6(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC6_0}
C6cgd    cgdnint6  cgdlow   {cgdC6_0}
*

.FUNC     cdsQges1(U)    {cdsa1/cdsb1 * (EXP(cdsb1*U)-1)} 
.FUNC     cdsQges2(U)    {cdsa2/cdsb2 * (EXP(cdsb2*U)-1)} 
.FUNC     cdsQges3(U)    {IF (U<cdsucut, cdsa3*U/2 + 1/2*cdsa3*cdsb3*LOG10(COSH((U-cdsc3)/cdsb3))/loge 
+                         - 1/2*cdsa3*cdsb3*LOG10(COSH((-cdsc3)/cdsb3))/loge, 
+                         cdsa3*cdsucut/2 + 1/2*cdsa3*cdsb3*LOG10(COSH((cdsucut-cdsc3)/cdsb3))/loge 
+                         - 1/2*cdsa3*cdsb3*LOG10(COSH((-cdsc3)/cdsb3))/loge)}  
.FUNC     cdsQges4(U)    {cdsa4*U/2 + 1/2*cdsa4*cdsb4*LOG10(COSH((U-cdsc4)/cdsb4))/loge 
+                         - 1/2*cdsa4*cdsb4*LOG10(COSH((-cdsc4)/cdsb4))/loge}  
.FUNC     cdsQges5(U)    {cdsa5*U}
.FUNC     cdsQges6(U)    {cdsa6*U/2 + 1/2*cdsa6*cdsb6*LOG10(COSH((U-cdsc6)/cdsb6))/loge 
+                         - 1/2*cdsa6*cdsb6*LOG10(COSH((-cdsc6)/cdsb6))/loge}  


*Cds with voltage source
E1cds       cdshigh    cdsnint1  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges1(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC1_0}
C1cds       cdsnint1   cdslow  {cdsC1_0}
*
E2cds       cdshigh    cdsnint2  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges2(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC2_0}
C2cds       cdsnint2   cdslow  {cdsC2_0}
*
E3cds       cdshigh    cdsnint3  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges3(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC3_0}
C3cds       cdsnint3   cdslow  {cdsC3_0}
*
E4cds       cdshigh    cdsnint4  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges4(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC4_0}
C4cds       cdsnint4   cdslow  {cdsC4_0}
*
C5cds       cdshigh    cdslow  {cdsC5_0}
*
E6cds       cdshigh    cdsnint6  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges6(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC6_0}
C6cds       cdsnint6   cdslow  {cdsC6_0}
*
*
C_Cgs      g    s        {Cgs}
*

Vcdshigh   d1   cdshigh  0
Vcdslow    s    cdslow   0

Vcgdhigh   d1   cgdhigh  0
Vcgdlow    g    cgdlow   0

*****

G_G_Ptot_channel 0 Tj VALUE {heat*LIMIT(V(d,s)*I(V_Ichannel),0,100k) }
G_G_Ptot_Epi     0 t1 VALUE {heat*(LIMIT(V(dd,d1)*I(V_Iepi),0,100k)+LIMIT(V(dd,dio)*I(V_Idiode)+V(dio,s)*I(V_Idio),0,100k))}
*

.ENDS

**********

.SUBCKT cool_600_is_var dd g s Tj t1 PARAMS: act=1 dVth=0 dR=0 Inn=1u Unn=10 Rmax=1 Rs=1u heat=1 
*
.PARAM  p666={4*SQRT(act)}
*
.PARAM Vth0=3.7
.PARAM Vmin=2.8     Vmax=4.7      
*
.PARAM fpar1=0.1265         fpar2=1.2825    
.PARAM fpar29=298           Tref=273           fpar3=4.7m
.PARAM fpar4=600m           fpar6=660
.PARAM fpar7=207m           fpar9=4
.PARAM fpar10=2.89          tt=400n
.PARAM fpar12=1.1           fpar13={2.167/act}  fpar14={48m/act}    fpar15=13 
.PARAM fpar16=-0.008        fpar17 ={0.1*4}
.PARAM fpar18=85.8u         fpar19=-29         fpar20=1.08         fpar21={Exp(fpar19)}
.PARAM fpar22={2.05*act}
.PARAM fpar23=0.91
.PARAM loge=0.43429448                     
*
.PARAM muth=1.08375                     
*
.PARAM Vth={Vth0+(Vmax-Vth0)*LIMIT(dVth,0,1)-(Vmin-Vth0)*LIMIT(dVth,-1,0)}
.PARAM p1={Unn-Inn*Rs-Vth0}
.PARAM p2={(((p1-SQRT(p1**2-4*fpar2/fpar22*Inn*(1+fpar1*p1)))/fpar2*fpar12+1)**2-1)/(4*fpar12)}
.PARAM p3={fpar15/(2*(Inn*(Inn*(Rmax-Rs)-p2)))}
.PARAM Rlim={p3*(-fpar15+SQRT(fpar15**2+4*(Rmax*Inn)**2-8*Rmax*Inn*(Inn*Rs+p2)+(2*p2+2*Inn*Rs)**2))}
.PARAM dRd={fpar13+IF(dVth==0,LIMIT(dR,0,1)*MAX(Rlim-fpar13,0),0)}
*
.FUNC  fpar24(Uee,p,pp,z1)  {IF(Uee>pp,(Uee-fpar2*z1)*z1,p*(pp-p)/fpar2*EXP((Uee-pp)/p))}
.FUNC  fpar25(Uds,p,Uee,z1,Tjx) {(fpar22/(1+fpar1*Uee)*(fpar29/Tjx)**muth)*fpar24(Uee,p,MIN(2*p,p+fpar2*Uds),z1)}
.FUNC  fpar28(Uds,Ugs,Tjx,p)  {fpar25(Uds,p,Ugs-Vth+fpar3*(Tjx-fpar29),MIN(Uds,(Ugs-Vth+fpar3*(Tjx-fpar29))/(2*fpar2)),Tjx)}
.FUNC  fpar26(Uds,Tjx)      {act*EXP(MIN(fpar19+(Uds-fpar6-fpar4*(Tjx-fpar29))/fpar7,23))}
.FUNC  fpar27(Uds,Ugs,Tjx) {sgn(Uds)*fpar28((SQRT(1+4*fpar12*abs(Uds))-1)/2/fpar12,Ugs,Tjx,fpar9*fpar18*Tjx)}
*
R1 g s 1G
G_G1 d s VALUE={fpar27(V(d,s),V(g,s),Tref+LIMIT(V(Tj),-200,999))}
Rd01 d s 500Meg
*
V_Ichannel d1 d 0
V_Iepi     dd d2 0  
*
G_G_Rd     d2 d1 VALUE 
+ {V(d2,d1)/( 
+ (1-fpar17)
+ *((dRd*0.5*(1+SQRT(1+4*(MAX(V(d2,d1),0)/fpar15)**(LIMIT(2+fpar16*(V(t1)+Tref-fpar29),0,3)))))
+ *((Tref+LIMIT(V(t1),-200,999))/fpar29)**fpar10)
+ + (fpar17)*((dRd*0.5*(1+SQRT(1+4*(MAX(V(d2,d1),0)/fpar15)**(LIMIT(2+fpar16*(V(t1)+Tref-fpar29),0,3)))))))}
*
R_R_ERd_g  d2 d1  10k
*
G_Rdiod    dd    dio2 VALUE {V(dd,dio2)/(fpar14*((Tref+LIMIT(V(t1),-200,999))/fpar29)**fpar23)}
R_Rdiod    dd    dio 500Meg
V_Idiode   dio2  dio 0
*
Dbody      s    di    DBODY
.MODEL DBODY  D(IS={fpar21*act}  N={fpar20}  RS=2u  EG=1.12  TT={tt})
*
Rd02       s    di 500Meg
G_diode2   s    di VALUE={-fpar26(V(di,s),Tref+LIMIT(V(t1),-200,999))}
V_Idio     dio  di 0
*

*Capacitance model:
*Cgd
.PARAM  cgdvgg=-0.1            cgducut=100 
.PARAM  cgda1={130p*act}    cgdb1=-1.7                 cgdC1_0={cgda1*EXP(cgdb1*cgdvgg)}
.PARAM  cgda2={80p*act}     cgdb2=-0.12                cgdC2_0={cgda2*EXP(cgdb2*cgdvgg)}
.PARAM  cgda3={4p*act}      cgdb3=-4      cgdc3=40     cgdC3_0={1/2*cgda3*(1+TANH((cgdvgg-cgdc3)/cgdb3))}
.PARAM  cgda4={1.2p*act}    cgdb4=200     cgdc4=400    cgdC4_0={1/2*cgda4*(1+TANH((cgdvgg-cgdc4)/cgdb4))}
.PARAM  cgda5={0.001p*p666}                            cgdC5_0={cgda5}
.PARAM  cgda6={0.3p*p666}   cgdb6=-600    cgdc6=40     cgdC6_0={1/2*cgda6*(1+TANH((cgdvgg-cgdc6)/cgdb6))}

*Cds
.PARAM  cdsvgg=0            cdsucut=100
.PARAM  cdsa1={400p*act}    cdsb1=-0.3                 cdsC1_0={cdsa1*EXP(cdsb1*cdsvgg)}
.PARAM  cdsa2={260p*act}    cdsb2=-0.05                cdsC2_0={cdsa2*EXP(cdsb2*cdsvgg)}
.PARAM  cdsa3={0p*act}      cdsb3=1       cdsc3=1      cdsC3_0={1/2*cdsa3*(1+TANH((cdsvgg-cdsc3)/cdsb3))}
.PARAM  cdsa4={5p*act}      cdsb4=-700    cdsc4=300    cdsC4_0={1/2*cdsa4*(1+TANH((cdsvgg-cdsc4)/cdsb4))}
.PARAM  cdsa5={0.001p*p666}                            cdsC5_0={cdsa5}
.PARAM  cdsa6={0.7p*p666}   cdsb6=-700    cdsc6=300    cdsC6_0={1/2*cdsa6*(1+TANH((cdsvgg-cdsc6)/cdsb6))}

*Cgs
.PARAM  cgs={act*110p}


.FUNC     cgdQges1(U)    {cgda1/cgdb1 * (EXP(cgdb1*U)-1)} 
.FUNC     cgdQges2(U)    {cgda2/cgdb2 * (EXP(cgdb2*U)-1)} 
.FUNC     cgdQges3(U)    {IF (U< cgducut, cgda3*U/2 + 1/2*cgda3*cgdb3*LOG10(COSH((U-cgdc3)/cgdb3))/loge 
+                         - 1/2*cgda3*cgdb3*LOG10(COSH((-cgdc3)/cgdb3))/loge, 
+                         cgda3*cgducut/2 + 1/2*cgda3*cgdb3*LOG10(COSH((cgducut-cgdc3)/cgdb3))/loge 
+                         - 1/2*cgda3*cgdb3*LOG10(COSH((-cgdc3)/cgdb3))/loge)}  
.FUNC     cgdQges4(U)    {cgda4*U/2 + 1/2*cgda4*cgdb4*LOG10(COSH((U-cgdc4)/cgdb4))/loge 
+                         - 1/2*cgda4*cgdb4*LOG10(COSH((-cgdc4)/cgdb4))/loge}  
.FUNC     cgdQges5(U)    {cgda5*U}
.FUNC     cgdQges6(U)    {cgda6*U/2 + 1/2*cgda6*cgdb6*LOG10(COSH((U-cgdc6)/cgdb6))/loge 
+                         - 1/2*cgda6*cgdb6*LOG10(COSH((-cgdc6)/cgdb6))/loge}  


*Cgd with voltage source
E1cgd    cgdhigh   cgdnint1  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges1(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC1_0}
C1cgd    cgdnint1  cgdlow   {cgdC1_0}
*
E2cgd    cgdhigh   cgdnint2  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges2(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC2_0}
C2cgd    cgdnint2  cgdlow   {cgdC2_0}
*
E3cgd    cgdhigh   cgdnint3  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges3(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC3_0}
C3cgd    cgdnint3  cgdlow   {cgdC3_0}
*
E4cgd    cgdhigh   cgdnint4  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges4(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC4_0}
C4cgd    cgdnint4  cgdlow   {cgdC4_0}
*
C5cgd    cgdhigh   cgdlow   {cgdC5_0}
*
E6cgd    cgdhigh   cgdnint6  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges6(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC6_0}
C6cgd    cgdnint6  cgdlow   {cgdC6_0}
*

.FUNC     cdsQges1(U)    {cdsa1/cdsb1 * (EXP(cdsb1*U)-1)} 
.FUNC     cdsQges2(U)    {cdsa2/cdsb2 * (EXP(cdsb2*U)-1)} 
.FUNC     cdsQges3(U)    {IF (U<cdsucut, cdsa3*U/2 + 1/2*cdsa3*cdsb3*LOG10(COSH((U-cdsc3)/cdsb3))/loge 
+                         - 1/2*cdsa3*cdsb3*LOG10(COSH((-cdsc3)/cdsb3))/loge, 
+                         cdsa3*cdsucut/2 + 1/2*cdsa3*cdsb3*LOG10(COSH((cdsucut-cdsc3)/cdsb3))/loge 
+                         - 1/2*cdsa3*cdsb3*LOG10(COSH((-cdsc3)/cdsb3))/loge)}  
.FUNC     cdsQges4(U)    {cdsa4*U/2 + 1/2*cdsa4*cdsb4*LOG10(COSH((U-cdsc4)/cdsb4))/loge 
+                         - 1/2*cdsa4*cdsb4*LOG10(COSH((-cdsc4)/cdsb4))/loge}  
.FUNC     cdsQges5(U)    {cdsa5*U}
.FUNC     cdsQges6(U)    {cdsa6*U/2 + 1/2*cdsa6*cdsb6*LOG10(COSH((U-cdsc6)/cdsb6))/loge 
+                         - 1/2*cdsa6*cdsb6*LOG10(COSH((-cdsc6)/cdsb6))/loge}  


*Cds with voltage source
E1cds       cdshigh    cdsnint1  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges1(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC1_0}
C1cds       cdsnint1   cdslow  {cdsC1_0}
*
E2cds       cdshigh    cdsnint2  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges2(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC2_0}
C2cds       cdsnint2   cdslow  {cdsC2_0}
*
E3cds       cdshigh    cdsnint3  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges3(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC3_0}
C3cds       cdsnint3   cdslow  {cdsC3_0}
*
E4cds       cdshigh    cdsnint4  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges4(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC4_0}
C4cds       cdsnint4   cdslow  {cdsC4_0}
*
C5cds       cdshigh    cdslow  {cdsC5_0}
*
E6cds       cdshigh    cdsnint6  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges6(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC6_0}
C6cds       cdsnint6   cdslow  {cdsC6_0}
*
*
C_Cgs      g    s        {Cgs}
*

Vcdshigh   d1   cdshigh  0
Vcdslow    s    cdslow   0

Vcgdhigh   d1   cgdhigh  0
Vcgdlow    g    cgdlow   0

*****

G_G_Ptot_channel 0 Tj VALUE {heat*LIMIT(V(d,s)*I(V_Ichannel),0,100k) }
G_G_Ptot_Epi     0 t1 VALUE {heat*(LIMIT(V(dd,d1)*I(V_Iepi),0,100k)+LIMIT(V(dd,dio)*I(V_Idiode)+V(dio,s)*I(V_Idio),0,100k))}
*

.ENDS

**********

.SUBCKT cool_600_i240_var dd g s Tj t1 PARAMS: act=1 dVth=0 dR=0 Inn=1u Unn=10 Rmax=1 Rs=1u heat=1 
*
.PARAM  p666={4*SQRT(act)}
*
.PARAM Vth0=3.7
.PARAM Vmin=2.8     Vmax=4.7      
*
.PARAM fpar1=0.1265         fpar2=1.2825    
.PARAM fpar29=298           Tref=273            fpar3=4.7m
.PARAM fpar4=600m           fpar6=660
.PARAM fpar7=207m           fpar9=4
.PARAM fpar10=2.89          tt=400n
.PARAM fpar12=1.1           fpar13={1.567/act}  fpar14={23.9m/act}   fpar15=12 
.PARAM fpar16=-0.008        fpar17 ={0.1*4}
.PARAM fpar18=85.8u         fpar19=-29          fpar20=1.08          fpar21={Exp(fpar19)}
.PARAM fpar22={2.05*act}
.PARAM fpar23=0.91
.PARAM loge=0.43429448                     
*
.PARAM muth=1.08375                     
*
.PARAM Vth={Vth0+(Vmax-Vth0)*LIMIT(dVth,0,1)-(Vmin-Vth0)*LIMIT(dVth,-1,0)}
.PARAM p1={Unn-Inn*Rs-Vth0}
.PARAM p2={(((p1-SQRT(p1**2-4*fpar2/fpar22*Inn*(1+fpar1*p1)))/fpar2*fpar12+1)**2-1)/(4*fpar12)}
.PARAM p3={fpar15/(2*(Inn*(Inn*(Rmax-Rs)-p2)))}
.PARAM Rlim={p3*(-fpar15+SQRT(fpar15**2+4*(Rmax*Inn)**2-8*Rmax*Inn*(Inn*Rs+p2)+(2*p2+2*Inn*Rs)**2))}
.PARAM dRd={fpar13+IF(dVth==0,LIMIT(dR,0,1)*MAX(Rlim-fpar13,0),0)}
*
.FUNC  fpar24(Uee,p,pp,z1)  {IF(Uee>pp,(Uee-fpar2*z1)*z1,p*(pp-p)/fpar2*EXP((Uee-pp)/p))}
.FUNC  fpar25(Uds,p,Uee,z1,Tjx) {(fpar22/(1+fpar1*Uee)*(fpar29/Tjx)**muth)*fpar24(Uee,p,MIN(2*p,p+fpar2*Uds),z1)}
.FUNC  fpar28(Uds,Ugs,Tjx,p)  {fpar25(Uds,p,Ugs-Vth+fpar3*(Tjx-fpar29),MIN(Uds,(Ugs-Vth+fpar3*(Tjx-fpar29))/(2*fpar2)),Tjx)}
.FUNC  fpar26(Uds,Tjx)      {act*EXP(MIN(fpar19+(Uds-fpar6-fpar4*(Tjx-fpar29))/fpar7,23))}
.FUNC  fpar27(Uds,Ugs,Tjx) {sgn(Uds)*fpar28((SQRT(1+4*fpar12*abs(Uds))-1)/2/fpar12,Ugs,Tjx,fpar9*fpar18*Tjx)}
*
R1 g s 1G
G_G1 d s VALUE={fpar27(V(d,s),V(g,s),Tref+LIMIT(V(Tj),-200,999))}
Rd01 d s 500Meg
*
V_Ichannel d1 d 0
V_Iepi     dd d2 0  
*
G_G_Rd     d2 d1 VALUE 
+ {V(d2,d1)/( 
+ (1-fpar17)
+ *((dRd*0.5*(1+SQRT(1+4*(MAX(V(d2,d1),0)/fpar15)**(LIMIT(2+fpar16*(V(t1)+Tref-fpar29),0,3)))))
+ *((Tref+LIMIT(V(t1),-200,999))/fpar29)**fpar10)
+ + (fpar17)*((dRd*0.5*(1+SQRT(1+4*(MAX(V(d2,d1),0)/fpar15)**(LIMIT(2+fpar16*(V(t1)+Tref-fpar29),0,3)))))))}
*
R_R_ERd_g  d2 d1  10k
*
G_Rdiod    dd    dio2 VALUE {V(dd,dio2)/(fpar14*((Tref+LIMIT(V(t1),-200,999))/fpar29)**fpar23)}
R_Rdiod    dd    dio 500Meg
V_Idiode   dio2  dio 0
*
Dbody      s    di    DBODY
.MODEL DBODY  D(IS={fpar21*act}  N={fpar20}  RS=2u  EG=1.12  TT={tt})
*
Rd02       s    di 500Meg
G_diode2   s    di VALUE={-fpar26(V(di,s),Tref+LIMIT(V(t1),-200,999))}
V_Idio     dio  di 0
*

*Capacitance model:
*Cgd
.PARAM  cgdvgg=-0.1            cgducut=100 
.PARAM  cgda1={130p*act}    cgdb1=-1.7                 cgdC1_0={cgda1*EXP(cgdb1*cgdvgg)}
.PARAM  cgda2={80p*act}     cgdb2=-0.12                cgdC2_0={cgda2*EXP(cgdb2*cgdvgg)}
.PARAM  cgda3={4p*act}      cgdb3=-4      cgdc3=40     cgdC3_0={1/2*cgda3*(1+TANH((cgdvgg-cgdc3)/cgdb3))}
.PARAM  cgda4={1.2p*act}    cgdb4=200     cgdc4=400    cgdC4_0={1/2*cgda4*(1+TANH((cgdvgg-cgdc4)/cgdb4))}
.PARAM  cgda5={0.001p*p666}                            cgdC5_0={cgda5}
.PARAM  cgda6={0.3p*p666}   cgdb6=-600    cgdc6=40     cgdC6_0={1/2*cgda6*(1+TANH((cgdvgg-cgdc6)/cgdb6))}

*Cds
.PARAM  cdsvgg=0            cdsucut=100
.PARAM  cdsa1={400p*act}    cdsb1=-0.3                 cdsC1_0={cdsa1*EXP(cdsb1*cdsvgg)}
.PARAM  cdsa2={260p*act}    cdsb2=-0.05                cdsC2_0={cdsa2*EXP(cdsb2*cdsvgg)}
.PARAM  cdsa3={0p*act}      cdsb3=1       cdsc3=1      cdsC3_0={1/2*cdsa3*(1+TANH((cdsvgg-cdsc3)/cdsb3))}
.PARAM  cdsa4={5p*act}      cdsb4=-700    cdsc4=300    cdsC4_0={1/2*cdsa4*(1+TANH((cdsvgg-cdsc4)/cdsb4))}
.PARAM  cdsa5={0.001p*p666}                            cdsC5_0={cdsa5}
.PARAM  cdsa6={0.7p*p666}   cdsb6=-700    cdsc6=300    cdsC6_0={1/2*cdsa6*(1+TANH((cdsvgg-cdsc6)/cdsb6))}

*Cgs
.PARAM  cgs={act*110p}


.FUNC     cgdQges1(U)    {cgda1/cgdb1 * (EXP(cgdb1*U)-1)} 
.FUNC     cgdQges2(U)    {cgda2/cgdb2 * (EXP(cgdb2*U)-1)} 
.FUNC     cgdQges3(U)    {IF (U< cgducut, cgda3*U/2 + 1/2*cgda3*cgdb3*LOG10(COSH((U-cgdc3)/cgdb3))/loge 
+                         - 1/2*cgda3*cgdb3*LOG10(COSH((-cgdc3)/cgdb3))/loge, 
+                         cgda3*cgducut/2 + 1/2*cgda3*cgdb3*LOG10(COSH((cgducut-cgdc3)/cgdb3))/loge 
+                         - 1/2*cgda3*cgdb3*LOG10(COSH((-cgdc3)/cgdb3))/loge)}  
.FUNC     cgdQges4(U)    {cgda4*U/2 + 1/2*cgda4*cgdb4*LOG10(COSH((U-cgdc4)/cgdb4))/loge 
+                         - 1/2*cgda4*cgdb4*LOG10(COSH((-cgdc4)/cgdb4))/loge}  
.FUNC     cgdQges5(U)    {cgda5*U}
.FUNC     cgdQges6(U)    {cgda6*U/2 + 1/2*cgda6*cgdb6*LOG10(COSH((U-cgdc6)/cgdb6))/loge 
+                         - 1/2*cgda6*cgdb6*LOG10(COSH((-cgdc6)/cgdb6))/loge}  


*Cgd with voltage source
E1cgd    cgdhigh   cgdnint1  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges1(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC1_0}
C1cgd    cgdnint1  cgdlow   {cgdC1_0}
*
E2cgd    cgdhigh   cgdnint2  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges2(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC2_0}
C2cgd    cgdnint2  cgdlow   {cgdC2_0}
*
E3cgd    cgdhigh   cgdnint3  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges3(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC3_0}
C3cgd    cgdnint3  cgdlow   {cgdC3_0}
*
E4cgd    cgdhigh   cgdnint4  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges4(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC4_0}
C4cgd    cgdnint4  cgdlow   {cgdC4_0}
*
C5cgd    cgdhigh   cgdlow   {cgdC5_0}
*
E6cgd    cgdhigh   cgdnint6  VALUE { MAX(V(cgdhigh,cgdlow),cgdvgg) - cgdQges6(MAX(V(cgdhigh,cgdlow),cgdvgg))/cgdC6_0}
C6cgd    cgdnint6  cgdlow   {cgdC6_0}
*

.FUNC     cdsQges1(U)    {cdsa1/cdsb1 * (EXP(cdsb1*U)-1)} 
.FUNC     cdsQges2(U)    {cdsa2/cdsb2 * (EXP(cdsb2*U)-1)} 
.FUNC     cdsQges3(U)    {IF (U<cdsucut, cdsa3*U/2 + 1/2*cdsa3*cdsb3*LOG10(COSH((U-cdsc3)/cdsb3))/loge 
+                         - 1/2*cdsa3*cdsb3*LOG10(COSH((-cdsc3)/cdsb3))/loge, 
+                         cdsa3*cdsucut/2 + 1/2*cdsa3*cdsb3*LOG10(COSH((cdsucut-cdsc3)/cdsb3))/loge 
+                         - 1/2*cdsa3*cdsb3*LOG10(COSH((-cdsc3)/cdsb3))/loge)}  
.FUNC     cdsQges4(U)    {cdsa4*U/2 + 1/2*cdsa4*cdsb4*LOG10(COSH((U-cdsc4)/cdsb4))/loge 
+                         - 1/2*cdsa4*cdsb4*LOG10(COSH((-cdsc4)/cdsb4))/loge}  
.FUNC     cdsQges5(U)    {cdsa5*U}
.FUNC     cdsQges6(U)    {cdsa6*U/2 + 1/2*cdsa6*cdsb6*LOG10(COSH((U-cdsc6)/cdsb6))/loge 
+                         - 1/2*cdsa6*cdsb6*LOG10(COSH((-cdsc6)/cdsb6))/loge}  


*Cds with voltage source
E1cds       cdshigh    cdsnint1  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges1(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC1_0}
C1cds       cdsnint1   cdslow  {cdsC1_0}
*
E2cds       cdshigh    cdsnint2  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges2(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC2_0}
C2cds       cdsnint2   cdslow  {cdsC2_0}
*
E3cds       cdshigh    cdsnint3  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges3(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC3_0}
C3cds       cdsnint3   cdslow  {cdsC3_0}
*
E4cds       cdshigh    cdsnint4  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges4(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC4_0}
C4cds       cdsnint4   cdslow  {cdsC4_0}
*
C5cds       cdshigh    cdslow  {cdsC5_0}
*
E6cds       cdshigh    cdsnint6  VALUE { MAX(V(cdshigh,cdslow),cdsvgg) - cdsQges6(MAX(V(cdshigh,cdslow),cdsvgg))/cdsC6_0}
C6cds       cdsnint6   cdslow  {cdsC6_0}
*
*
C_Cgs      g    s        {Cgs}
*

Vcdshigh   d1   cdshigh  0
Vcdslow    s    cdslow   0

Vcgdhigh   d1   cgdhigh  0
Vcgdlow    g    cgdlow   0

*****

G_G_Ptot_channel 0 Tj VALUE {heat*LIMIT(V(d,s)*I(V_Ichannel),0,100k) }
G_G_Ptot_Epi     0 t1 VALUE {heat*(LIMIT(V(dd,d1)*I(V_Iepi),0,100k)+LIMIT(V(dd,dio)*I(V_Idiode)+V(dio,s)*I(V_Idio),0,100k))}
*

.ENDS
*


.SUBCKT VOM1271T            A K -out +out
XU1 A K 0 N001 VO1263
XU2 +out N001 +out 0 I-FAST_TOFF
.ends

.SUBCKT	I-FAST_TOFF	Iin	Iout NC2 NC1
V1 Iin Iout 0
W1 NC1 NC2 V1 W1
.model W1 CSW(Ron=100K Roff=10Meg IT=1uA)
.ends

.SUBCKT VO1263		A K -Iout +Iout
XU1 A K N001 K IRLED1
XU2 N001 K -Iout +Iout GAIN-MOD
R1 -Iout +Iout 1Meg
* Zout of driver
.ends


.SUBCKT IRLED1				1 2 3 4
F1 4 3 V1 1
V1 5 2 0
D1 1 5 D1
.model D1 D(IS=1P N=1.948621 RS=1.560495 BV=6 IBV=10U CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N)
.ends

.SUBCKT GAIN-MOD        +Iin -Iin -Iout +Iout
F1 -Iout +Iout V1 0.001
*current gain of driver
V1 +Iin -Iin 0
.backanno
.ends