* BF992 SPICE MODEL JANUARY 1996 PHILIPS SEMICONDUCTORS * ENVELOPE SOT143 * 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1; .SUBCKT BF992 1 2 3 4 L10 1 10 0.12N L20 2 20 0.12N L30 3 30 0.12N L40 4 40 0.12N L11 10 11 1.20N L21 20 21 1.20N L31 30 31 1.20N L41 40 41 1.20N C13 10 30 0.085P C14 10 40 0.085P C21 10 20 0.017P C23 20 30 0.085P C24 20 40 0.005P D11 42 11 ZENER D12 42 41 ZENER D21 32 11 ZENER D22 32 31 ZENER RS 10 12 100 MOS1 61 41 11 12 GATE1 L=2E-6 W=2200E-6 MOS2 21 31 61 12 GATE2 L=3.0E-6 W=2200E-6 .MODEL ZENER D BV=10 CJO=1.2E-12 RS=10 .MODEL GATE1 + NMOS LEVEL=3 UO=904.9 VTO=-0.2051 NFS=300E9 TOX=60E-9 + NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=500E-9 THETA=0.11 + ETA=0.2095 KAPPA=0.6488 LD=0.3E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .MODEL GATE2 + NMOS LEVEL=3 UO=600 VTO=-0.2051 NFS=300E9 TOX=60E-9 + NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=500E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.3E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=1.467E-12 CBS=0.5E-12 .ENDS BF992 * BF998 SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS * ENVELOPE SOT143 * 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1; .SUBCKT BF998 1 2 3 4 L10 1 10 0.12N L20 2 20 0.12N L30 3 30 0.12N L40 4 40 0.12N L11 10 11 1.20N L21 20 21 1.20N L31 30 31 1.20N L41 40 41 1.20N C13 10 30 0.085P C14 10 40 0.085P C21 10 20 0.017P C23 20 30 0.085P C24 20 40 0.005P D11 42 11 ZENER D12 42 41 ZENER D21 32 11 ZENER D22 32 31 ZENER RS 10 12 100 MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6 MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6 .MODEL ZENER D BV=10 CJO=1.2E-12 RS=10 .MODEL GATE1 + NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .MODEL GATE2 + NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .ENDS BF998 * BF998WR SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS * ENVELOPE SOT343R * 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1; .SUBCKT BF998WR 1 2 3 4 L10 1 10 0.10N L20 2 20 0.34N L30 3 30 0.34N L40 4 40 0.34N L11 10 11 1.10N L21 20 21 1.10N L31 30 31 1.10N L41 40 41 1.10N C13 10 30 0.060P C14 10 40 0.060P C21 10 20 0.050P C23 20 30 0.070P C24 20 40 0.005P D11 42 11 ZENER D12 42 41 ZENER D21 32 11 ZENER D22 32 31 ZENER RS 10 12 100 MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6 MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6 .MODEL ZENER D BV=10 CJO=1.2E-12 RS=10 .MODEL GATE1 + NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .MODEL GATE2 + NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .ENDS BF998WR * BF994S SPICE MODEL MARCH 1996 PHILIPS SEMICONDUCTORS * ENVELOPE SOT143 * 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1; .SUBCKT BF994S 1 2 3 4 L10 1 10 0.12N L20 2 20 0.12N L30 3 30 0.12N L40 4 40 0.12N L11 10 11 1.20N L21 20 21 1.20N L31 30 31 1.20N L41 40 41 1.20N C13 10 30 0.085P C14 10 40 0.085P C21 10 20 0.017P C23 20 30 0.085P C24 20 40 0.005P D11 42 11 ZENER D12 42 41 ZENER D21 32 11 ZENER D22 32 31 ZENER RS 10 12 100 MOS1 61 41 11 12 GATE1 L=2E-6 W=1280E-6 MOS2 21 31 61 12 GATE2 L=3.0E-6 W=1280E-6 .MODEL ZENER D BV=10 CJO=1.2E-12 RS=10 .MODEL GATE1 + NMOS LEVEL=3 UO=750 VTO=-0.4357 NFS=300E9 TOX=60E-9 + NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.1686 KAPPA=2.282 LD=0.3E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .MODEL GATE2 + NMOS LEVEL=3 UO=600 VTO=-0.4357 NFS=300E9 TOX=60E-9 + NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.3E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .ENDS BF994S * Pin order changed in BF981 model * 4.: SOURCE; 1.: DRAIN; 2.: GATE 2; 3.: GATE 1; .SUBCKT BF981 4 1 2 3 *Dual Gate Mosfet MD1 5 3 4 4 BF981A MD2 1 2 5 4 BF981B W=50U .MODEL BF981A NMOS (LEVEL=1 VTO=-1.1 KP=15M GAMMA=3.3U + PHI=.75 LAMBDA=3.75M RS=2.2 IS=12.5F PB=.8 MJ=.46 + CBD=3.43P CBS=4.11P CGSO=240P CGDO=200P CGBO=20.5N) .MODEL BF981B NMOS (LEVEL=1 VTO=-.9 KP=18M GAMMA=19.08U + PHI=.75 LAMBDA=13.75M RD=41.3 IS=12.5F PB=.8 MJ=.46 + CBD=3.43P CBS=4.11P CGSO=240P CGDO=200P CGBO=14.5N) * Philips * N-Channel Depletion DG-MOSFET .ENDS BF981 ********** * Copyright Intusoft 1991 * All Rights Reserved ********** .SUBCKT BF993 4 1 2 3 *Connections Source Drain Gate2 Gate1 *Dual Gate Mosfet MD1 5 3 4 4 BF993G1 MD2 1 2 5 4 BF993G2 W=65U .MODEL BF993G1 NMOS (LEVEL=1 VTO=-1.0 KP=23M GAMMA=7.4U + PHI=.75 LAMBDA=13.75M RS=2.5 IS=31.2F PB=.8 MJ=.46 + CBD=9.66P CBS=11.5P CGSO=600P CGDO=500P CGBO=61.4N .MODEL BF993G2 NMOS (LEVEL=1 VTO=-.9 KP=25M GAMMA=30.4U + PHI=.75 LAMBDA=23.75M RD=74.4 IS=31.2F PB=.8 MJ=.46 + CBD=9.66P CBS=11.5P CGSO=600P CGDO=500P CGBO=61.4N * Siemens * N-Channel Depletion DG-MOSFET .ENDS ********** .SUBCKT BF980A 4 1 2 3 *Connections Source Drain Gate2 Gate1 *Dual Gate Mosfet MD1 5 3 4 4 BF980AA MD2 1 2 5 4 BF980AB W=50U .MODEL BF980AA NMOS (LEVEL=1 VTO=-1.0 KP=17M GAMMA=4.34U + PHI=.75 LAMBDA=4.16M RS=3.2 IS=20.8F PB=.8 MJ=.46 + CBD=2.89P CBS=3.47P CGSO=300P CGDO=250P CGBO=25.4N) .MODEL BF980AB NMOS (LEVEL=1 VTO=-.9 KP=20M GAMMA=17.47U + PHI=.75 LAMBDA=14.16M RD=30 IS=20.8F PB=.8 MJ=.46 + CBD=2.89P CBS=3.47P CGSO=300P CGDO=250P CGBO=25.4N) * Philips * N-Channel Depletion DG-MOSFET .ENDS ********** *SRC=3N201;MN201;Dual Gate FETs;25V 50mA VHF; .SUBCKT 3N201 4 1 2 3 *Connections Source Drain Gate2 Gate1 *Dual Gate Mosfet MD1 5 3 4 4 MN201-1 MD2 1 2 5 4 MN201-2 W=35U .MODEL MN201-1 NMOS (LEVEL=1 VTO=-1.45 KP=11.8M GAMMA=3.26U + PHI=.75 LAMBDA=30M RD=1M RS=20.8 IS=25F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) .MODEL MN201-2 NMOS (LEVEL=1 VTO=-1.00 KP=12.5M GAMMA=27.26U + PHI=.75 LAMBDA=37M RD=15.3 RS=1M IS=30F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) * Motorola * N-Channel Depletion DG-MOSFET .ENDS ************* *SRC=BF990A;BF990A;Dual Gate FETs;18V 30mA UHF; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT BF990A 4 1 2 3 *Dual Gate Mosfet MD1 5 3 4 4 BF990AA MD2 1 2 5 4 BF990AB W=50U .MODEL BF990AA NMOS (LEVEL=1 VTO=-1 KP=17M GAMMA=3.34U + PHI=.75 LAMBDA=4.16M RS=2.2 IS=20.8F PB=.8 MJ=.46 + CBD=3.89P CBS=4.66P CGSO=300P CGDO=250P CGBO=25.4N) .MODEL BF990AB NMOS (LEVEL=1 VTO=-.7 KP=21M GAMMA=17.47U + PHI=.75 LAMBDA=14.16M RD=34.1 IS=20.8F PB=.8 MJ=.46 + CBD=3.89P CBS=4.66P CGSO=300P CGDO=250P CGBO=13.4N) * Philips * N-Channel Depletion DG-MOSFET .ENDS ********** ********** *SRC=BF996S;BF996S;Dual Gate FETs;20V 30mA UHF; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT BF996S 4 1 2 3 *Dual Gate Mosfet MD1 5 3 4 4 BF996A MD2 1 2 5 4 BF996B W=42U .MODEL BF996A NMOS (LEVEL=1 VTO=-1.2 KP=14M GAMMA=5.1U + PHI=.75 LAMBDA=11.75M RS=3.8 IS=18.7F PB=.8 MJ=.46 + CBD=2.56P CBS=3.07P CGSO=300P CGDO=250P CGBO=22.4N) .MODEL BF996B NMOS (LEVEL=1 VTO=-1.0 KP=17M GAMMA=22.8U + PHI=.75 LAMBDA=13.75M RD=24.3 IS=18.7F PB=.8 MJ=.46 + CBD=2.56P CBS=3.07P CGSO=300P CGDO=250P CGBO=10.4N) * Siemens * N-Channel Depletion DG-MOSFET .ENDS ********** ********** *SRC=BFR84;BFR84;Dual Gate FETs;20V 50mA VHF; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT BFR84 4 1 2 3 *Dual Gate Mosfet MD1 5 3 4 4 BFR84A MD2 1 2 5 4 BFR84B W=50U .MODEL BFR84A NMOS (LEVEL=1 VTO=-2.5 KP=11M GAMMA=8.9U + PHI=.75 LAMBDA=3.75M RS=7.4 IS=31.2F PB=.8 MJ=.46 + CBD=11.4P CBS=13.7P CGSO=360P CGDO=300P CGBO=54.3N) .MODEL BFR84B NMOS (LEVEL=1 VTO=-2.0 KP=14M GAMMA=26.6U + PHI=.75 LAMBDA=13.75M RD=72.4 IS=31.2F PB=.8 MJ=.46 + CBD=11.4P CBS=13.7P CGSO=360P CGDO=300P CGBO=39.3N) * Philips * N-Channel Depletion DG-MOSFET .ENDS ********** *SRC=MFE130;MFE130;Dual Gate FETs;35V 30mA VHF; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT MFE130 4 1 2 3 *Dual Gate Mosfet MD1 5 3 4 4 MFE130A MD2 1 2 5 4 MFE130B W=50U .MODEL MFE130A NMOS (LEVEL=1 VTO=-2.3 KP=10M GAMMA=2.18U + PHI=.75 LAMBDA=2.14M RS=14.2 IS=10.7F PB=.8 MJ=.46 + CBD=9.76P CBS=11.7P CGSO=276P CGDO=230P CGBO=44.4N) .MODEL MFE130B NMOS (LEVEL=1 VTO=-1.8 KP=15M GAMMA=14.20U + PHI=.75 LAMBDA=12.14M RD=16.9 IS=10.7F PB=.8 MJ=.46 + CBD=9.76P CBS=11.7P CGSO=276P CGDO=230P CGBO=44.4N) * Motorola * N-Channel Depletion DG-MOSFET 06-01-1991 .ENDS ********** ********** *SRC=3N203;MN203;Dual Gate FETs;25V 50mA VHF; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT 3N203 4 1 2 3 *Dual Gate Mosfet - 3N203 MD1 5 3 4 4 MN203-1 MD2 1 2 5 4 MN203-2 W=37U .MODEL MN203-1 NMOS (LEVEL=1 VTO=-1.45 KP=10.5M GAMMA=3.26U + PHI=.75 LAMBDA=30M RS=24.8 IS=25F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) .MODEL MN203-2 NMOS (LEVEL=1 VTO=-1.05 KP=11.5M GAMMA=27.26U + PHI=.75 LAMBDA=37M RD=15.3 IS=30F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) * Motorola * N-Channel Depletion DG-MOSFET .ENDS ********** *SRC=MPF201;MPF201;Dual Gate FETs;25V 50mA VHF; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT MPF201 4 1 2 3 e *Dual Gate Mosfet MD1 5 3 4 4 MPF201A MD2 1 2 5 4 MPF201B W=35U .MODEL MPF201A NMOS (LEVEL=1 VTO=-1.45 KP=11.8M GAMMA=3.26U + PHI=.75 LAMBDA=30M RS=20.8 IS=25F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) .MODEL MPF201B NMOS (LEVEL=1 VTO=-1.00 KP=12.5M GAMMA=27.26U + PHI=.75 LAMBDA=37M RD=15.3 IS=30F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) * Motorola * N-Channel Depletion DG-MOSFET 06-01-1991 .ENDS ********** *SRC=MPF203;MPF203;Dual Gate FETs;25V 50mA VHF; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT MPF203 4 1 2 3 *Dual Gate Mosfet MD1 5 3 4 4 MPF203A MD2 1 2 5 4 MPF203B W=37U .MODEL MPF203A NMOS (LEVEL=1 VTO=-1.42 KP=10.5M GAMMA=3.26U + PHI=.75 LAMBDA=30M RS=24.8 IS=25F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) .MODEL MPF203B NMOS (LEVEL=1 VTO=-1.03 KP=11.5M GAMMA=27.26U + PHI=.75 LAMBDA=37M RD=15.3 IS=30F PB=.8 MJ=.46 + CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N) * Motorola * N-Channel Depletion DG-MOSFET 06-01-1991 .ENDS ********** *SRC=MPF521;MPF521;Dual Gate FETs;25V 50mA Enhancement; *HELP issyntax.hlp "Dual-Gate MOSFETS" .SUBCKT MPF521 4 1 2 3 *Dual Gate Mosfet MD1 5 3 4 4 MPF521A MD2 1 2 5 4 MPF521B W=70U .MODEL MPF521A NMOS (LEVEL=1 VTO=1.2 KP=12M GAMMA=5.81U + PHI=.75 LAMBDA=3M RS=17.5 IS=15F PB=.8 MJ=.46 + CBD=4.28P CBS=5.13P CGSO=180P CGDO=150P CGBO=32.6N) .MODEL MPF521B NMOS (LEVEL=1 VTO=1.4 KP=10M GAMMA=4.84U + PHI=.75 LAMBDA=13M RD=47.5 IS=15F PB=.8 MJ=.46 + CBD=4.28P CBS=5.13P CGSO=180P CGDO=150P CGBO=32.6N) * Motorola * N-Channel Enhancement DG-MOSFET 06-01-1991 .ENDS .SUBCKT 3SK292 1 2 3 4 L10 1 10 0.12N L20 2 20 0.12N L30 3 30 0.12N L40 4 40 0.12N L11 10 11 1.20N L21 20 21 1.20N L31 30 31 1.20N L41 40 41 1.20N C13 10 30 0.085P C14 10 40 0.085P C21 10 20 0.017P C23 20 30 0.085P C24 20 40 0.005P D11 42 11 ZENER D12 42 41 ZENER D21 32 11 ZENER D22 32 31 ZENER RS 10 12 100 MOS1 61 41 11 12 GATE1 L=1.1u W=1150u MOS2 21 31 61 12 GATE2 L=2u W=1150u .MODEL ZENER D BV=10 CJO=2.5E-12 RS=10 .MODEL GATE1 + NMOS LEVEL=3 UO=600 VTO=-0.4905 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=140E3 RS=3.5 RD=3.5 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .MODEL GATE2 + NMOS LEVEL=3 UO=600 VTO=-0.59 NFS=300E9 TOX=42E-9 + NSUB=3E15 VMAX=100E3 RS=3.5 RD=3.5 XJ=200E-9 THETA=0.11 + ETA=0.06 KAPPA=2 LD=0.1E-6 + CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12 .ENDS 3SK292