.model DMG2302UK NMOS(
+ VTO=0.6       ; Threshold voltage (typical)
+ KP=11.9       ; Transconductance parameter (A/V², from IDS = 1A saturation)
+ RD=0.12       ; Drain resistance (enforces 120 mΩ RDS(on))
+ RS=0.001      ; Source resistance (minimal)
+ LAMBDA=0.01   ; Channel-length modulation (matches saturation data)
+ RG=2.7
+ CGSO=130p     ; Gate-source capacitance (estimated)
+ CGDO=26p     ; Gate-drain capacitance (estimated)
+ CBD=18p      ; Drain-bulk junction capacitance (estimated)
+ PB=0.8        ; Junction potential (default)
+ MJ=0.5        ; Junction grading coefficient (default)
+ IS=1e-14      ; Saturation current (typical)
+ BV=20         ; Breakdown voltage (20V max VDS)
+ IBV=10u)


.model DMG2301LK PMOS(
+ VTO=-0.6      ; Threshold voltage (datasheet)
+ KP=5.71       ; Transconductance (from IDS = -3A at VGS = -1.6V)
+ RD=0.21       ; Drain resistance (210 mΩ RDS(on) at VGS = -2.5V)
+ RS=0.001      ; Source resistance (minimal)
+ LAMBDA=0.005  ; Channel-length modulation (tuned)
+ RG=41
+ CGSO=128p     ; Gate-source capacitance (from Ciss - Crss)
+ CGDO=28p      ; Gate-drain capacitance (from Crss)
+ CBD=8p        ; Drain-bulk capacitance (from Coss - CGDO)
+ PB=0.8        ; Junction potential (default)
+ MJ=0.5        ; Junction grading coefficient (default)
+ IS=1e-14      ; Saturation current (typical)
+ BV=20         ; Breakdown voltage (20V max |VDS|)
+ IBV=10u)

.model BSS84 PMOS (
+ VTO = -2.1
+ KP = 0.2
+ BV = 50
+ RG = 3)

.model BSS123 NMOS (
+ VTO = 1.6
+ KP = 1
+ BV = 100
+ RD = 2.4
+ RS = 1.8)


.model 2N7002 NMOS (
+ LEVEL=1 VTO=1.6 KP=0.17 RS=1.5 RD=0.5 
+ IS=40f Rb=0.14 LAMBDA=0.02
+ CGSO=50p CGDO=12p CJ=50p)

.MODEL Pwr_NMOS NMOS(
+ Qg = 7n
+ Vto = 2.3
+ Kp = 92
+ Bv = 72
+ Rg = 1.2
+ Rs = 6.7m
+ Rb = 4.5m
+ Is = 1.9p
+ N = 1.02
+ CJO = 688p
+ Cgs = 1041p
+ tt = 27n)

.MODEL CSD18543Q3A NMOS (
+ VTO=2.0           ; Threshold voltage
+ KP=3.84           ; Transconductance (A/V^2)
+ RD=5m             ; Drain resistance
+ RS=5m             ; Source resistance
+ CGSO=880p         ; Gate-source capacitance
+ CGDO=4.8p         ; Gate-drain capacitance
+ CJ=163p           ; Junction capacitance
+ IS=12.8n          ; Body diode saturation current
+ N=1.5             ; Emission coefficient
+ TT=27n            ; Transit time for diode
+ BV=60             ; Breakdown voltage)


.model CSD18543 VDMOS (Rs=4.5m Rd=4.5m Rg=0.5 Vto=1.87
+ Kp=11.3 lambda=0.346 RonX=11.5 eta=75m Vtotc=-2m Is=1.18p
+ N=1.04865 Rb=1.56m Eg=1.11 XTI=4.9687 trb1=5.7m Cgs=887p
+ Cgdmin=5p  Cgdmax=50p Cjo=163p Tnom=25 mfg="TI" Vds=60
+ Ids=20 Ron=12m Qg=5.6n)

.MODEL DMP6018 PMOS (
+ VTO=-2.0          ; Threshold voltage
+ KP=9.6            ; Transconductance (A/V^2)
+ RD=13m            ; Drain resistance
+ RS=13m            ; Source resistance
+ CGSO=3.3n         ; Gate-source capacitance
+ CGDO=200p         ; Gate-drain capacitance
+ CJ=316p           ; Junction capacitance
+ IS=53n            ; Body diode saturation current
+ N=1.5             ; Emission coefficient
+ TT=32n            ; Transit time for diode
+ BV=60             ; Breakdown voltage)